Polycrystalline Semiconductors III

Erscheinungsjahr 1994
ISBN: 978-3-03859-970-8
Verlag: Trans Tech Publications

Sonstiges, Englisch, 628 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

This book covers the physics and technology of polycrystalline semiconductors by presenting the work of scientists who are concerned with a variety of polycrystalline materials in research, technology, and application, with a view to bridge the gap between fundamental and technological aspects of polycrystalline semiconductors.

Autoren/Hrsg.

Strunk, Horst P.

Werner, J.H.

Fortin, B.

Bonnaud, O.

Inhaltsverzeichnis

The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth SiliconCorrelation of Structural and Electronic Properties from Dislocations in SemiconductorsHow Can Dislocations Enhance the Efficiency of Photovoltaic Solar Cells?About the Electrical Conductivity of Dislocations in Multicrystalline Silicon Solar Cellsg-Tensors of Electrons Bound to 60?-Dislocations in Ge and SiFormation of Misfit Dislocation Networks in Ge/Si as Dependent on the Substrate OrientationIn Situ Observations of Dislocation Motion in Polycrystalline Silicon during Straining Experiment in a High-Voltage Electron MicroscopeTheoretical Study of the Atomic and Electronic Structures of Grain Boundaries in SemiconductorsStructure of Grain Boundaries in Polycrystalline SemiconductorsHigh Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary ConditionsCalculation of the Free Energy of Different Configurations of {001}S=13 Grain Boundary in Silicon by the Quasiharmonic MethodImproved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in SiliconCalculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect CrystalM?bius Tight Binding Calculations for Grain BoundariesStructural and Electrical Transport Properties of Grain Boundaries in High Temperature SuperconductorsThe Microstructure of Sm2-xCexCuO4-dInteraction of Grain Boundaries, Dislocations and Impurity Atoms in SemiconductorsOxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical PropertiesNon-Ideal I-V-Characteristics of Block-Cast Silicon Solar CellsCopper and Nickel Precipitation in a S=25 Silicon BicrystalDesorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon FilmsSegregation and Precipitation of Platinum Silicides in Si/SiO2 Interfaces and Dislocations Calculation of the Atomic and Electronic Structure of the {113} Planar Interstitial Defects in SiliconLocal Grain Boundary Property MeasurementsLocal Investigation of the Electrical Properties of Grain Boundaries in SiliconInvestigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current MappingMinority Charge Carrier Trapping at Grain Boundaries Provided with a High Barrier Schottky ContactElectrical Transport in Polycrystalline SemiconductorsOrigin of Curved Arrhenius Plots for the Conductivity of Polycrystalline SemiconductorsEffect of Local Inhomogeneities on the Electrical Properties of Polycrystalline SiliconOn Some Photoelectrical Interface Processes in Mixed Semiconductor Heterostructures with Photosynthetic PigmentPolycrystalline Silicon-Silicon Carbide Emitters for Heterojunction TransistorsInvestigation of the Defect Distribution in Polycrystalline SiliconProperties of Thermoluminescence and Thermally Stimulated Conductivity in Polycrystalline Materials: Numerical StudiesMicroscopic Processes in CrystallisationLaser Beam Application in Semiconductor TechnologyIn-Situ Excimer Laser Induced Crystallization of Hydrogenated Amorphous Silicon Thin FilmsMicrostructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon FilmsCrystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor DepositionBeam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous SiliconCrystalline and Electrical Properties of Polysilicon Obtained by Annealing of Si Films Produced by Low Pressure Chemical Vapor Deposition from Si2H6Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy AnalysisGrain Boundary Character Distribution in Rapidly Solidified and Annealed Silicon RibbonsDecomposition and Microstructure during Crystallization of Amorphous GexSi1-x FilmsA Comparison of Polysilicon Produced by Excimer (ArF) Laser Crystallisation and Low-Temperature (600?C) Furnace Crystallisation of Hydrogenated Amorphous Silicon (a-Si:H)Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600?C AnnealThe Art of Living with Defects in Silicon: Gettering and PassivationHydrogen and Deuterium in Semi-Crystalline Silicon Wafers and Solar CellsExternal Gettering around Extended Defects in Multicrystalline Silicon WafersEvidence for Defect Metastability in Hydrogen Passivated Fine Grain Polycrystalline SiliconDeuterium Effusion from Microcrystalline Sputtered Silicon Thin Films: Hydrogen Stability and Bonding ConfigurationsDefect Structure of Multicrystalline Chemical Vapor Deposited Silicon FilmsOptical and Photoelectrical Properties of Microcrystalline Silicon Layers in Relation to Structural OrderingPhoto-Induced and Thermally Stimulated Degredation in a-Si:H: Mechanism of Defect CreationElectrical Properties and Microstructure of Metal Oxides VaristorsGeneral and Characteristic Features of the Structure of Polycrystalline and Non-Crystalline SiliconProperties of Anodically Oxidized Polycrystalline Silicon LayersProperties of Multicrystalline Silicon Heat Treated by Classical and Rapid Thermal ProcessingA Contribution to the Characterization of Multicrystalline Solar SiliconSilicon Layers Grown by Liquid Phase Epitaxy on Polycrystalline Silicon SubstratesStructural, Electrical and Optical Properties of Reactive Magnetron Sputtered Poycrystalline ZnO: Al Films as a Function of the Oxygen Partial Pressure during DepositionPhotovoltaic Solar Cells: State of the Art, National Strategies and PerspectivesPolycrystalline Silicon Films, New Candidates for Photovoltaics?Polycrystalline Silicon Thin Films on Glass for Photovoltaic Cell ApplicationsCharge Build-Up in Solar CellsTreedimensional Modelling of a Back Junction Solar Cell Made with Improved Polycrystalline Silicon WafersMoS2, MoSe2, WS2 and WSe2 Thin Films for PhotovoltaicsTextured Thin Films of Transition Metal Dichalcogenides for Potential Application in Photoelectrochemical Solar CellsElectrooptical and Structural Properties of Polycrystalline CdTe Thin Films for Solar CellsGrowth Mechanism and Properties of Chemically Deposited Cadmium Sulfide Thin FilmsCharacterization of CuInSe2 Absorber Thin Films Grown by Metal Organic Chemical Vapor DepositionPhysical Vapor Deposition of CuInX2 (X = S, Se) Thin Films: A Model for the Growth MechanismEffect of Annealing in a Selenium Atmosphere on the Properties of Flash Evaporated CuInSe2 Polycrystalline Thin FilmsEffect of Heat Treatment on Electrical Properties of Polycrystalline CuInSe2 Thin Films Prepared by Two MethodsPhysical Properties of Electrodeposited Copper Indium Diselenide Thin Films and Junction RealizationPolysilicon Technologies for Large Area DisplaysThermal Stability of Glass Substrates During Solid Phase Crystallisation of a-Si on Glass by Rapid Thermal AnnealingPolycrystalline Silicon Thin Film Transistors for Liquid Crystal DisplaysPerformance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase CrystallizationModelling and Optimisation of Poly-Si Thin Film Transistors for Flat Panel DisplaysBulk and Interface States in Polycrystalline Silicon Thin Film TransistorsHot Carrier Induced Degradation in Polycrystalline Silicon Thin Film TransistorsInfluence of the Polysilicon Film Structure on the Capacitance Voltage Characteristics of Thin Film TransistorsPhotoconductivity Peculiarities in CdSe Field Transistor Layer