Buch, Englisch, 460 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 733 g
Fundamental Properties and Modern Photonic and Electronic Devices
Buch, Englisch, 460 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 733 g
ISBN: 978-3-642-07994-8
Verlag: Springer
The p–n junction was invented in the ?rst half of the twentieth century and the latter half saw the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s. However, theoretical predictions of the improbabilityofsynthesizingp-typewidebandgapsemiconductorscastalong shadow over hopes for devices emitting in the elusive blue part of the elect- magnetic spectrum, which would complete, with red and green, the quest for the primary colors making up white light. At a time when many researchers abandoned their e?orts on nitrides, Professor Isamu Akasaki of Nagoya U- versity at this time remained committed to his belief that “synthesis of high quality GaN crystals would eventually enable p-type doping” and in 1989 he succeeded in fabricating the world’s ?rst GaN p–n junction light emitting diode. Professor Isamu Akasaki kindly accepted our invitation to contribute to this book and describes his journey ‘from the nitride wilderness’ to the ?rst experimental results of blue emission from GaN p–n junctions: Japan’s major contribution to the development of wide bandgap semiconductor devices. The discovery of blue emission from GaN p–n junctions in 1989 was the major technological turning point during the development of wide bandgap emission devices with wide reaching scienti?c, industrial and social impli- tions.
Zielgruppe
Professional/practitioner
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lasertechnologie, Holographie
- Naturwissenschaften Chemie Analytische Chemie Massenspektrometrie, Spektroskopie, Spektrochemie
- Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Naturwissenschaften Physik Elektromagnetismus Quantenoptik, Nichtlineare Optik, Laserphysik
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
- Technische Wissenschaften Sonstige Technologien | Angewandte Technik Angewandte Optik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe
Weitere Infos & Material
Development and Applications of Wide Bandgap Semiconductors.- Fundamental Properties of Wide Bandgap Semiconductors.- Photonic Devices.- Electronic Devices.- Novel Nano-Heterostructure Materials and Related Devices.- Crystal Growth.
