Spintronics Handbook, Second Edition: Spin Transport and Magnetism

Volume Two: Semiconductor Spintronics
2. New Auflage 2019
ISBN: 978-1-4987-6960-0
Verlag: Taylor & Francis Inc

Buch, Englisch, 638 Seiten, Format (B × H): 261 mm x 184 mm, Gewicht: 1506 g

The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Autoren/Hrsg.

Tsymbal, Evgeny Y.

Žutic, Igor

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Volume 2. Semiconductor Spintronics. Section IV. Spin Transport and Dynamics in Semiconductors 1. Spin Relaxation and Spin Dynamics in Semiconductors and Graphene 2. Electrical Spin Injection and Transport in Semiconductors 3. Spin Transport in Si and Ge: Hot Electron Injection and Detection Experiments 4. Tunneling Magnetoresistance, Spin-Transfer and Spinorbitronics with (Ga,Mn)As 5. Spin Transport in Organic Semiconductors 6. Spin Transport in Ferromagnet/III-V Semiconductor Heterostructures 7. Spin Polarization by Current 8. Anomalous and Spin-Injection Hall Effects Section V. Magnetic Semiconductors, Oxides and Topological Insulators 9. Magnetic Semiconductors: III-V Semiconductors 10. Magnetism of Dilute Oxides 11. Magnetism of Complex Oxide Interfaces 12. LaAlO3/SrTiO3: A Tale of Two Magnetisms 13. Electric-field Controlled Magnetism 14. Topological Insulators: From Fundamentals to Applications 15. Quantum Anomalous Hall Effect in Topological Insulators

Über Autor(innen)

Evgeny Tsymbal is a George Holmes University Distinguished Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL), Director of the UNL’s Materials Research Science and Engineering Center (MRSEC), and Director of the multi-institutional Center for NanoFerroic Devices (CNFD). Evgeny Tsymbal’s research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. He is a fellow of the American Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the Outstanding Research and Creativity Award (ORCA).

Igor Žutic is a Professor of Physics at the University at Buffalo, the State University of New York. His work spans topics from high-temperature superconductors, Majorana fermions, unconventional magnetism, proximity effects, and two-dimensional materials, to prediction of various spin-based devices that are not limited to the concept of magnetoresistance used in commercial application for magnetically stored information. Such devices, including spin photodiodes, spin solar cells, spin transistors, and spin lasers (front cover illustration) have already been experimentally demonstrated. Igor Žutic´ is a fellow of the American Physical Society, a recipient of 2006 National Science Foundation CAREER Award, and 2019 State University of New York Chancellor’s Award for Excellence.