Ultrawide Bandgap Semiconductors

Erscheinungsjahr 2021
ISBN: 978-0-12-822870-8
Verlag: William Andrew Publishing

Buch, Englisch, 480 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 910 g

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.

Zielgruppe

<p>Scientists and engineers performing fundamental and applied research and technology development in the field of ultrawide bandgap semiconductors. Students, researchers and practitioners working in the field of semiconductors, thermal, electronic, photonic and quantum devices.</p>

Autoren/Hrsg.

Weitere Mitwirkende

Zhao, Yuji

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

1. Fundamental technologies for gallium oxide transistors Masataka Higashiwaki 2. Advanced concepts in Ga2O3 power and RF devices Wenshen Li, Debdeep Jena and Huili Grace Xing 3. -(AlxGa(1?X))2O3 epitaxial growth, doping and transport Nidhin Kurian Kalarickal and Siddharth Rajan 4. Thermal science and engineering of ?-Ga2O3 materials and devices Zhe Cheng, Jingjing Shi, Chao Yuan, Samuel Kim and Samuel Graham 5. Controlling different phases of gallium oxide for solar-blind photodetector application Xiaolong Zhao, Mengfan Ding, Haiding Sun and Shibing Long 6. Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications Yuanpeng Wu, Ping Wang, Emmanouil Kioupakis and Zetian Mi 7. High-Al-content heterostructures and devices Robert Kaplar, Albert Baca, Erica Douglas, Brianna Klein, Andrew Allerman, Mary Crawford and Shahed Reza 8. AlN nonlinear optics and integrated photonics Xianwen Liu, Alexander W. Bruch and Hong. X. Tang 9. Material epitaxy of AlN thin films Shangfeng Liu and Xinqiang Wang 10. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum Hong Chen, Jingan Zhou, Houqiang Fu and Yuji Zhao 11. AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes Haiding Sun, Feng Wu, Jiangnan Dai and Changqing Chen 12. Electrical transport properties of hexagonal boron nitride epilayers Samuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin and Hongxing Jiang

Über Autor(innen)

Zhao, Yuji
Yuji Zhao is an Assistant Professor of Electrical Engineering at Arizona State University (ASU), where he leads the GaN research efforts at ASU. He received the Ph.D degree from University of California Santa Barbara (UCSB) in 2012 under the supervision of Nobel Laureate Professor Shuji Nakamura. Prof. Zhao's research interests are in the field of wide bandgap materials and devices for applications in power electronics, RF and power ICs, and quantum photonics. He has authored/co-authored more than 140 journal and conference publications, 3 book chapters, and over 20 patents. Prof. Zhao is the receipt of 2019 Presidential Early Career Award for Scientists and Engineers, 2017 ASU Fulton Outstanding Assistant Professor Award, 2016 DTRA Young Investigator Award, 2015 NASA Early Career Faculty Award, 2015 SFAz Bisgrove Scholar Faculty Award, and 2010-2013 UCSB SSLEC Outstanding Research Award. He has served as a technical committee member for various international conferences such as CLEO, ECS Meeting, International Conference on Crystal Growth and Epitaxy, International Symposium on Semiconductor Lighting Emitting Devices, etc. Prof. Zhao is a member of IEEE and MRS.