Polycrystalline Semiconductors V

Erscheinungsjahr 1999
ISBN: 978-3-0357-0902-5
Verlag: Trans Tech Publications

Sonstiges, Englisch, 616 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.

Autoren/Hrsg.

Werner, J.H.

Strunk, Horst P.

Schock, H.W.

Inhaltsverzeichnis

Atomic Structure and Properties of Extended Defects in SiliconElectrical Activity of Tilt and Twist Grain Boundaries in SiliconComputer Simulation of Impurity Diffusion in the Vicinity of Grain BoundariesImpurity Effect on the Dislocation DLTS Spectrum in SiliconFormation and Annihilation of New Donors in Ribbon Growth on Substrate SiliconElectrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature AnnealingGrain Boundary Effects in Ionic and Mixed ConductorsQualitative and Quantitative Analysis of Thin Film Heterostructures by Electron Beam Induced CurrentLaser Beam Induced Current Characterization of High Efficiency Chalcopyrite Solar CellsEffective Diffusion Length of Multicrystalline Solar CellsInjection and Collection Diffusion Lengths of Polycrystalline Thin-Film Solar CellsHydrogenated Microcrystalline Silicon for Photovoltaic ApplicationsIntrinsic Microcrystalline Silicon for Solar CellsDeposition of Microcrystalline Silicon Films by Magnetron SputteringThin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High RateLow-Temperature Deposition of Microcrystalline Silicon by Microwave Plasma-Enhanced SputteringInfluence of Deposit Thickness on the Microstructure and Surface Roughness of Silicon Films Deposited from SilaneAdaptation of Microelectronics Simulator to the Polycrystalline Silicon TechnologyThickness Control of the Amorphous Buffer Layer of Hydrogenated Nanocrystalline Silicon: Effect of the Dopant ConcentrationStructure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon FilmsHighly Doped Microcrystalline SiGe Films: Structure and Transport PropertiesPhotoluminescence Measurements of Microcrystalline SiliconSilicon Produced by Thermal Chemical Vapour Deposition on Ceramic Substrates for Photovoltaic ApplicationsGrain Matrix Made with Excimer-Laser Crystallization of Thin Silicon FilmsGrain Boundary Location Control by Patterned Metal Film in Excimer Laser Crystallized PolysiliconCharacterisation of Excimer Laser Crystallised Polysilicon by X-Ray Diffraction and by Channeling Contrast in a Scanning Electron MicroscopeMulticrystalline Silicon Thin Films: Laser Crystallization Conditions and PropertiesLaser-Crystallized Polycrystalline Silicon on Glass for Photovoltaic ApplicationsProperties of Poly-Si Obtained by Solid Phase Crystallization of Differently Produced a:Si:H Thin FilmsTransmission Electron Microscopy and Raman Analysis of the Crystallisation Process of a-Si on Glass for Low Seed DensityFine-Crystalline Silicon Grown at Low Temperatures: Investigations by High-Resolution MicroscopyStudy of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High RatePolycrystalline Silicon Films Produced by Low Pressure Chemical Vapour Deposition for Microswitch Applications: The Stress as Dependent on Deposition Conditions, Doping Type, and Thermal TreatmentsUltrathin Quasi-Monocrystalline Silicon Films for Electronic DevicesAtomic Layer Deposition of ZnO Films and Their Application to Solar CellsProperties of Transparent Conducting Indium Tin Oxide Films Deposited by Reactive e-Beam Evaporation on Heated GlassLarge Area Device Quality Indium-Tin-Oxide Thin Films by Magnetron SputtertingIon Assisted Reactive Magnetron Sputtering as a Deposition Method for High Quality Thin Films of Compound SemiconductorsStructure and Properties of TiO2 Thin Films for Gas SensorsTexture Etched Aluminium Doped Zinc Oxide-Structural and Electrical PropertiesElectron Spin Resonance Centers in Donor-Doped CaTiO3 Single CrystalsModification in the Chemical Bath Deposition Apparatus, Growth and Characterization of CdS Semiconducting Thin Films for Photovoltaic ApplicationsProcess by PbSe Thin Film Deposition Reactions by Close-Spaced Vapor Transport TechniqueComparative Study of Isothermal Grain Growth of CdS and CdTe in the Presence of Halide Fluxesp-Type Doping of CdTeCharge Transport and Photoelectric Processes in Polycrystalline Cadmium Telluride Surface-Barrier StructuresDeposition Study of Bi2Te3 Thin Films by Close-Spaced Vapor Transport and Close-Spaced SublimationHigh Temperature Electrical Conductivity in ZnS:Cu:Cl Ceramics and in CdSexTe1-x Polycrystalline Solid SolutionsInfluence of the Layer Oxidation on the Electrical Conductivity and the Positron Trapping in the Polycrystalline ZnCr2Se4 and CuCr2Se4 SpinelsDefect-Induced Metal-Semiconductor Transition in CuxCoyCrzSe4Fabrication of High Efficiency Cu(In,Ga)Se2 Thin Film Solar Cells Prepared by Physical Vapor DepositionGrowth and Characterization of CuxAg1-xInSe2 Thin Films by Pulsed Laser DepositionPreparation of CuInS2 Thin Films by Sequential Evaporation of In2S3 and CuSGrowth of CuGaSe2 Thin Films by Metal Organic Chemical Vapour Deposition from Different Organometallic SourcesFormation of Polycrystalline CuInS2-Films by Plasma Sulphurization of Cu-In Bilayers in a Magnetron Discharge in an Ar/H2S-AtmospherePolycrystalline Bulk CuInSe2 with a Deviation from Valence StoichiometryRelation Between Photoconductivity and Deposition Conditions of Evaporated CuInSe2 Polycrystalline Thin FilmsMicrostructure of Cu-Rich CuGaSe2 Thin FilmsLight-Induced Metastabilities in the Interface Region of Cu(In,Ga) Se2-Based Photovoltaic Devices Studied by Laplace Transform Junction SpectroscopyAir-Annealing Effects on Polycrystalline Cu(In,Ga)Se2 HeterojunctionsPhotoelectrical Properties of In/p-(Cu,Ag)(In,Ga) (Se,Te)2 Surface-Barrier StructuresPolarization Photosensitivity of Polycrystalline-Film Cu(In,Ga)Se2/CdS/ZnO StructuresPhotoluminescence Study of Cu(GaxIn1-x)3Se5 and CuIn3(SxSe1-x)5 Crystals with 0=x=1Fullerene-Based Thin Films as a Novel Polycrystalline SemiconductorLow Dislocation Density Multicrystalline Silicon for Photovoltaic ApplicationsPhase Field Modeling of the Growth of mc-Silicon from the MeltLow-Temperature Silicon Epitaxy by Ion-Assisted DepositionProfiled Poly-Silicon Films by Hot-Wire Chemical Vapour Deposition for Solar Cells on Cheap Metal SubstrateOptical Characterization of Ru2Si3 and Ru2Ge3 by Various Spectroscopic Methods and by Band Structure CalculationsCubic Silicon Carbide Films Grown by Reactive Magnetron Sputtering at Relatively Low TemperatureDefect Engineering in Polycrystalline Silicon Using UltrasoundDefects Modification by Ultrasound in CrystalsMethod for the Evaluation of the Influence of Gettering and Bulk Passivation on Non-Uniform Block-Cast Multicrystalline Si Solar CellsInfluence of Hydrogen Plasma Treatment on Electric Properties of Polycrystalline CdSxSe1-x FilmsWet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry MethodsImproving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar CellsPolycrystalline Silicon Thin Film Transistors: State of the Art and Improvement of Electrical CharacteristicsLeakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film TransistorsProcess to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass SubstrateAn Analytical Model for Rectifying Contacts on Polycrystalline SemiconductorsModelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structurea-Si/c-Si Heterojunctions as a Tool to Realise Solar Cells Based on Thin Poly-Silicon Growth on GlassHeterojunctions for Polycrystalline Silicon Solar CellsProperties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain SizeW-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity