Buch, Englisch, Band 52, 420 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 748 g
Buch, Englisch, Band 52, 420 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 748 g
Reihe: Semiconductors and Semimetals
ISBN: 978-0-12-752160-2
Verlag: ACADEMIC PR INC
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Zielgruppe
AUDIENCE: Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Magnetismus
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Naturwissenschaften Physik Elektromagnetismus Elektrizität, Elektrodynamik
Weitere Infos & Material
K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.
