Buch, Englisch, 438 Seiten, Format (B × H): 163 mm x 235 mm, Gewicht: 748 g
Buch, Englisch, 438 Seiten, Format (B × H): 163 mm x 235 mm, Gewicht: 748 g
Reihe: Series in Materials Science and Engineering
ISBN: 978-0-8493-9299-3
Verlag: Taylor & Francis Inc
Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry.Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developments.
Featuring contributions from active researchers and leading experts, the book chronicles the main research challenges in spintronics. It first depicts the different classes of materials systems currently under investigation for use in spintronic devices. The contributors also address issues concerning the operation of spintronic devices, such as the new principle for future devices that use spin-polarized current. This promises to enable switching of individual spin components of the device while avoiding crosstalk at the nanoscale. The book concludes with descriptions of both Si and III-V semiconductor-based spin transistors and the integration of spin technology with photonics.
The second-generation spintronic devices discussed in Spintronic Materials and Technology will not only improve the existing capabilities of electronic transistors, but will enable future computers to run faster and consume less power.
Zielgruppe
Professional Practice & Development
Autoren/Hrsg.
Weitere Infos & Material
Spintronic Materials and Characterizations. Magneto-Optical Studies of Magnetic Oxide Semiconductors. Synthesis and Characterization of Wide Band-Gap Semiconductor Spintronic Materials. Magnetic Properties of (Ga,Mn)As. Soft X-Ray Resonant Magnetic Scattering from Magnetic Nanostructures. The Effect for Ru Magnetization Switching and CPP-GMR Enhancement. The Spin Dependent Interfacial Transparency. Spin Torque and Domain Wall Magneto Resistance. Current-Driven Switching of Magnetization—Theory and Experiment. Domain Wall Scattering and Current-Induced Switching in Patterned Ferromagnetic Devices. Domain Wall Magnetoresistance in Magnetic Nanowires. Introduction to a Theory of Current-Driven Domain Wall Motion. Spin-Injection and Spin Devices. Silicon-Based Spin Electronic Devices: Toward a Spin Transistor. Spin-LEDs: Fundamentals and Applications. Spin Photo-Electronic Devices Based on Fe and the Heusler Alloy Co2MnGa. Ballistic Spin Tranport across a Schottky Barrier Induced by Photoexcitation. Ferromagnetic Metal/III-V Semiconductor Hybrid Spintronic Devices. The Spin-Valve Transistor.
