Buch, Englisch, 1196 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 2280 g
Buch, Englisch, 1196 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 2280 g
ISBN: 978-3-0357-1579-8
Verlag: Trans Tech Publications
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Preface
Chapter 1: Growth and Wafer Manufacturing
1.1: Bulk Crystal Growth
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
Investigation of Carbon Inclusions in SiC Crystals Grown by PVT Method
Crystal Separation Method of 6-Inch 4H-SiC Crystal Using Adhesion Shrinkage between a Seed and a Seed Holder in Cooling Process
Modified Hot-Zone Design of Growth Cell for Reducing the Warpage of 6”-SiC Wafer
Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
Investigation on the Threading Dislocations Formed by Lattice Misfits during Initial Stage of Sublimation Growth of 4H-SiC
An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis
X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates
1.2: Epitaxial and Thin Film Growth
Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications
Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
Revisiting the Site-Competition Doping of 4H-SiC: Cases of N and Al
Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
1.3: Growth of 3C-SiC Layer
Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth
3C-SiC Bulk Growth: Effect of Growth Rate and Doping on Defects and Stress
Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
Exploration of Solid Phase Epitaxy of 3C-SiC on Silicon
Mono-Versus Poly-Crystalline SiC for Nuclear Applications
Microscopic Identification of Surface Steps on SiC by Density-Functional Calculations
1.4: Etching and Wafer Machining
Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size
Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
Chemical Behavior of Byproduct Layer in Exhaust Tube Formed by Silicon Carbide Epitaxial Growth in a System Using Chlorides
SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of Reaction Heat
Cost-Efficient High-Throughput Polishing of Silicon Carbide Seed Crystals
A New Permanganate-Free Slurry for GaN-SiC CMP Applications
Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition
Chapter 2: Characterization and Defect Engineering
2.1: Fundamental and Characterization
Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons
Improved High Precision Dopant/Carrier Concentration Profiling with Corona-Charge Non-Contact C-V (CnCV)
Wurtzite SiC Formation in Plastic Deformed 3C and 6H
Evaluation of p-Type 4H-SiC Piezoresistan
