Heteroepitaxy of Semiconductors

Theory, Growth, and Characterization, Second Edition
2. New Auflage 2020
ISBN: 978-0-367-65580-8
Verlag: Taylor & Francis Ltd

Buch, Englisch, 659 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 1220 g

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Autoren/Hrsg.

Ayers, John E.

Kujofsa, Tedi

Rago, Paul

Raphael, Johanna

Fachgebiete

• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Technische Wissenschaften Sonstige Technologien | Angewandte Technik Lasertechnologie, Holographie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik

Inhaltsverzeichnis

Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Strain Relaxation: I. Uniform Layers. Mismatched Heteroepitaxial Growth and Strain Relaxation: II. Graded Layers and Multilayered Structures. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Material. Metamorphic Devices.

Über Autor(innen)

J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.