E-Book, Englisch, 659 Seiten
Ayers / Kujofsa / Rago Heteroepitaxy of Semiconductors
2. Auflage 2016
ISBN: 978-1-4822-5436-5
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
Theory, Growth, and Characterization, Second Edition
E-Book, Englisch, 659 Seiten
ISBN: 978-1-4822-5436-5
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
This book serves as a comprehensive reference and graduate-level text on semiconductor heteroepitaxy, the crystal growth of semiconductor layers on dissimilar substrates for the purpose of making modern semiconductor devices, including high-speed transistors, lasers and detectors, digital circuits, photovoltaic cells, solid-state lighting, and sensors. The second edition of this book, which remains the top book in the field because of its comprehensive treatment and focus on principles, contains two entirely new chapters on metamorphic buffers and devices.
Zielgruppe
Graduate students and researchers in the field of semiconductor materials. It will serve as a graduate-level textbook as well as a reference book for professionals in the field, including university faculty, post-doctoral researchers and personnel in government and industrial research and development laboratories. As a text, the book may be used in a graduate course on semiconductor heteroepitaxy, characterization of semiconductors, metamorphic semiconductor devices or another closely related topic.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Introduction. Properties of Semiconductors. Heteroepitaxial Growth. Surface and Chemical Considerations in Heteroepitaxy. Mismatched Heteroepitaxial Growth and Lattice Relaxation. Characterization of Heteroepitaxial Layers. Defect Engineering in Heteroepitaxial Layers. Metamorphic Buffer Layers. Metamorphic Semiconductor Devices.