Gettering and Defect Engineering in Semiconductor Technology XII
Erscheinungsjahr 2008
ISBN: 978-3-908451-43-3
Verlag: Trans Tech Publications
Selected, peer reviewed papers from Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007" held from 14th to 19th October 2007 in Italy at the EMFCSC
Buch, Englisch, 648 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1300 g
ISBN: 978-3-908451-43-3
Verlag: Trans Tech Publications
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Preface
1. Crystalline Silicon for Solar Cells: Single Crystals, Multi-Crystalline Si, Ribbons, Si Thin Films on Substrates
Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers
Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells
Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature
Mechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO Substrates
Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
2. Silicon-Based Materials and Advanced Semiconductor Materials (Strained Si, SOI, SiGe, SiC, Ge)
Origination and Properties of Dislocations in Thin Film Nitrides
Metal In-Diffusion during Fe and Co-Germanidation of Germanium
Investigation of 4H-SiC Layers Implanted by Al Ions
Interstitial Carbon-Related Defects in Si1-xGex Alloys
Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures
Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon
Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography
Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers
Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions
Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
Co-Germanide Schottky Contacts on Ge
Internal Dissolution of Buried Oxide in SOI Wafers
Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs
Vacancy Clusters in Germanium
Formation of Hydrogen-Related Shallow Donors in Ge1-xSix Crystals Implanted with Protons
Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer
3. Impurities (Oxygen, Carbon, Nitrogen, Fluorine, Metals) in Si
Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
Oxygen Dimers and Related Defects in Plastically Deformed Silicon
Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
Detection of Nickel in Silicon by Recombination Lifetime Measurements
Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors
SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon
Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping
4. Modeling/Simulation of Defects in Si/Semiconductors
The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
Fundamental Interactions of Fe in Silicon: First-Principles Theory
First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium
First-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ß-SiC
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
A Theoretical Study of Copper Contaminated Dislocations in Silicon
Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon
Effect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si Crystals: Quantum-Chemical Simulations
Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation
Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth
5. Defect Engineering in Microelectronics and Photovoltaics
Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
Two Paths of Oxide Precipitate Nucleation in Silicon
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon
The Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline Silicon
Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces
Structure of Magnetically Ordered Si:Mn
Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers
Defect Engineering for SIMOX Processing
Hydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface Properties
IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu
The Role of High Temperature Treatments in Stress Release and Defect Reduction
Properties of Si:Cr Annealed under Enhanced Stress Conditions
Radiation Enhanced Diffusion of Implanted Palladium in Silicon
Evolution of Thermal Donors in Silicon Enhanced by Self-Interstitials
Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing
6. Gettering and Passivation Techniques
Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites
Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter
Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures
Impact of Extended Defects on the Electrical Properties of Solar Grade Multicrystalline Silicon for Solar Cell Application
Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity
Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors
7. Defect and Impurity Characterization (Physical and Electrical)
HREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge.
Nanoscale Imaging of CaCu3Ti4O12 Dielectric Properties: The Role of Surface Defects
Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique
Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements
Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics
Silicon Epitaxial Layers for CCD and CMOS Imager Sensors: Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques
New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure
Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates
DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE
Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy
Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation
Regular Dislocation Networks in Si. Part II: Luminescence
Mapping of Device Yield Relevant Electrical Si-Wafer Parameters
Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties
On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis
EBIC Investigations of Deformation Induced Defects in Si
8. Si-Based Nanostructures (Nanocrystals, Nanowires, Nanodevices)
Growth and Properties of Silicon Nanowires for Low-Dimensional Devices
Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation
Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.
Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation
Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation
9. Silicon-Based Heterostructures and Optoelectronics
Erbium Doped Materials for a Si-Based Microphotonics
Regular Dislocation Networks in Silicon. Part I: Structure
Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers
Dislocation Photoluminescence in Silicon and Germanium
Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application
Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers
Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics
The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon
Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
X-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS Structures
Electroluminescence from ZnO/n+-Si Heterojunction
Characterization of SiO2/Si Interface by Cathodoluminescent Method
