Sonstiges, Englisch, 648 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 648 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-908454-27-4
Verlag: Trans Tech Publications
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors? fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM WafersCarrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline SiliconImpact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar CellsDivacancy Induced Improvement for Stabilization of Silicon Conductivity versus TemperatureMechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO SubstratesAdvances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic ApplicationsOrigination and Properties of Dislocations in Thin Film NitridesMetal In-Diffusion during Fe and Co-Germanidation of GermaniumInvestigation of 4H-SiC Layers Implanted by Al IonsInterstitial Carbon-Related Defects in Si1-xGex AlloysEffect of Various Treatments on Light Emission Properties of Si-Rich-SiOx StructuresSize Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous SiliconVery First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray TopographyPassivation of Si and SiGe/Si Structures with 1-Octadecene MonolayersConfiguration of DV Complexes In Ge: Positron Probing of Ion CoresInfluence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain JunctionsComparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in GermaniumCo-Germanide Schottky Contacts on GeInternal Dissolution of Buried Oxide in SOI WafersDegradation and their Recovery Behavior of Irradiated GaAlAs LEDsVacancy Clusters in GermaniumFormation of Hydrogen-Related Shallow Donors in Ge1-xSix Crystals Implanted with ProtonsCrystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator StructureSiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen TransferMicrowave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and GermaniumImpact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type SiliconOxygen Dimers and Related Defects in Plastically Deformed SiliconEnhanced Oxygen Precipitation during the Czochralski Crystal GrowthInfluence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-SiDetection of Nickel in Silicon by Recombination Lifetime MeasurementsEffect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon SensorsSEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in SiliconRadiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent AnnealingInfrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ SiliconPeculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in SiliconMultiplicity of Nitrogen Species in Silicon: The Impact on Vacancy TrappingThe Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen PrecipitationFundamental Interactions of Fe in Silicon: First-Principles TheoryFirst Principles Calculations of the Formation Energy of the Neutral Vacancy in GermaniumFirst-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ?-SiCPrimary Defects in n-Type Irradiated Germanium: A First-Principles InvestigationA Theoretical Study of Copper Contaminated Dislocations in SiliconTheoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in SiliconEffect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si Crystals: Quantum-Chemical SimulationsModeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and PrecipitationIntegrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal GrowthDislocations in Silicon as a Tool to Be Used in Optics, Electronics and BiologyTwo Paths of Oxide Precipitate Nucleation in SiliconEngineering of Dislocation-Loops for Light Emission from Silicon DiodesA Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline SiliconThe Temperature Evolution of the Hydrogen Plasma Induced Structural Defects in Crystalline SiliconElectrical Uniformity of Direct Silicon Bonded Wafer InterfacesStructure of Magnetically Ordered Si:MnInfluence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si WafersDefect Engineering for SIMOX ProcessingHydrogen Interaction with Point Defects in the Si-SiO2 Structures and its Influence on the Interface PropertiesIR Studies on the Interaction between Thermal and Radiation Defects in SiliconDiffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of VoidsRadiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with CuThe Role of High Temperature Treatments in Stress Release and Defect ReductionProperties of Si:Cr Annealed under Enhanced Stress ConditionsRadiation Enhanced Diffusion of Implanted Palladium in SiliconEvolution of Thermal Donors in Silicon Enhanced by Self-InterstitialsEnhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal AnnealingStudy of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering SitesEffect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different DiameterHorizontal Versus Vertical Annealing of Silicon Wafers at High TemperaturesImpact of Extended Defects on the Electrical Properties of Solar Grade Multicrystalline Silicon for Solar Cell ApplicationInvestigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type ConductivityEvaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation DetectorsHREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge.Nanoscale Imaging of CaCu3Ti4O12 Dielectric Properties: The Role of Surface DefectsObservation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current TechniqueVacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic MeasurementsPhotoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx DielectricsSilicon Epitaxial Layers for CCD and CMOS Imager Sensors: Limits and Challenges of the In-Line and Off-Line Metal Detection TechniquesNew Opportunities to Study Defects by Soft X-Ray Absorption Fine StructureFemtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass SubstratesDLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPEElectrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance MicroscopyDeep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by ImplantationRegular Dislocation Networks in Si. Part II: LuminescenceMapping of Device Yield Relevant Electrical Si-Wafer ParametersClustering of Gold on 6H-SiC and Local Nanoscale Electrical PropertiesOn the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural AnalysisEBIC Investigations of Deformation Induced Defects in SiGrowth and Properties of Silicon Nanowires for Low-Dimensional DevicesModification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion ImplantationHydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser AblationProperties of Nanostructure Formed on SiO2/Si Interface by Laser RadiationErbium Doped Materials for a Si-Based MicrophotonicsRegular Dislocation Networks in Silicon. Part I: StructureMono- and Polycrystalline Silicon for Terahertz Intracenter LasersDislocation Photoluminescence in Silicon and GermaniumSilicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser ApplicationInvestigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 LayersLight-Emitting Structures with Near-Band Edge Luminescence for Si OptoelectronicsThe Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped SiliconTerahertz Emission from Phosphor Centers in SiGe and SiGe/Si SemiconductorsX-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS StructuresElectroluminescence from ZnO/n+-Si HeterojunctionCharacterization of SiO2/Si Interface by Cathodoluminescent Method
