Claeys / Vanhellemont / Richter Gettering and Defect Engineering in Semiconductor Technology VII

Erscheinungsjahr 1997
ISBN: 978-3-0357-0671-0
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 556 Seiten

Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Autoren/Hrsg.

Claeys, Cor

Vanhellemont, Jan

Richter, Hans

Kittler, Martin

Inhaltsverzeichnis

Preface
I. Keynote Address
Design: New Material Challenge for Silicon ULSI
II. Silicon Materials
Silicon Wafer Technology: The Challenges towards the Gigabit Era
Hydrogen Annealed Silicon Wafer
Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal
CZ Crystal Growth Development in Super Silicon Crystal Project
III. Gettering Techniques
Gettering by Voids in Silicon: A Comparison with other Techniques
Gettering in Advanced Low Temperature Processes
Metal Gettering by Defective Regions in Carbon-Implanted Silicon
Metallic Impurity Gettering in MeV Implanted Si
Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
Interaction of Impurities and Dislocations in Silicon before and after External Gettering
The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
IV. Oxygen in Silicon
Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
Vacancy-Assisted Oxygen Precipitation Phenomena in Si
Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
State of Oxygen and Growth Conditions
Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
Initial Stage of Oxygen Precipitation in Silicon
Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation
V. Erbium in Silicon
Erbium in Silicon: Problems and Challenges
Thermal Donors in Silicon Doped with Erbium
Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons
VI. Radiation Effects in Semiconductors
Defect Engineering Radiation Tolerant Silicon Detectors
Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors
Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance
An IR Study of the Annealing Behaviour of A-Center in Silicon
Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes
Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er
Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor
The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation
VII. Dislocations in Silicon
Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM
Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments
Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in Silicon
The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si
Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals
The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations
Deformation Interaction of Defects in Crystal: Concept of Evaluation
VIII. Defect Engineering
Yield Analysis of CMOS Ics
The Role of Grown-in Defects in Advanced Silicon Technology
Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models
Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen
Strain and Gettering in Epitaxial Silicon Wafers
Strain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements
Defects Produced in Silicon by Reactive Ion Etching
Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si
Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers
Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
IX. Advanced Semiconductor Materials and Devices
Planar Solidification of Multicrystalline Silicon for Phtovoltaic Applications
Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing
Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals
On the Defect Structures in Te-Doped GaAs
Study of Surface Conduction Related Effects in GaAs MESFET's
Nitridation Effects in n-CdTe
X. Semiconductor Material and Device Diagnostics
Formation of Grown-in Defects in CZ-Si Crystals
X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon
Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution
Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model)
Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes
An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry
Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si
Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures
Raman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride Films
Raman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass Substrates
A Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain Boundaries
New Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)
Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions