Gettering and Defect Engineering in Semiconductor Technology VII

Erscheinungsjahr 1997
ISBN: 978-3-03859-987-6
Verlag: Trans Tech Publications

Sonstiges, Englisch, 556 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Autoren/Hrsg.

Claeys, Cor

Vanhellemont, Jan

Richter, Hans

Kittler, Martin

Inhaltsverzeichnis

Design: New Material Challenge for Silicon ULSISilicon Wafer Technology: The Challenges towards the Gigabit EraHydrogen Annealed Silicon WaferFormation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon CrystalCZ Crystal Growth Development in Super Silicon Crystal ProjectGettering by Voids in Silicon: A Comparison with other TechniquesGettering in Advanced Low Temperature ProcessesMetal Gettering by Defective Regions in Carbon-Implanted SiliconMetallic Impurity Gettering in MeV Implanted SiInfluence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown SiliconA Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon WafersOxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski SiliconUse of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide SynthesisInteraction of Impurities and Dislocations in Silicon before and after External GetteringThe Influence of Intrinsic Point Defects on Getter Formation in Silicon WafersComparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon WafersEffect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in SiVacancy-Assisted Oxygen Precipitation Phenomena in SiMechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon WafersState of Oxygen and Growth ConditionsAnalyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC MeasurementsOxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural PerfectionInitial Stage of Oxygen Precipitation in SiliconOxygen Precipitation in Silicon Thin Layers in the Presence of CarbonHeterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced CentresDiffusion and Precipitation of Oxygen in Silicon Doped with GermaniumLow-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor FormationErbium in Silicon: Problems and ChallengesThermal Donors in Silicon Doped with ErbiumRadiation Induced Defects InGaAs Photodiodes by 1-MeV Fast NeutronsDefect Engineering Radiation Tolerant Silicon DetectorsMicroscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon DetectorsLattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device PerformanceAn IR Study of the Annealing Behaviour of A-Center in SiliconLifetime Considerations for High-Energy Proton Irradiated Si p-n Junction DiodesDefect Formation during Erbium Implantation and Subsequent Annealing of Si:ErAlpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon TransistorThe Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray IrradiationCritical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAMModification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat TreatmentsInfluence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in SiliconThe Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in SiInfluence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon CrystalsThe Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of DislocationsDeformation Interaction of Defects in Crystal: Concept of EvaluationYield Analysis of CMOS IcsThe Role of Grown-in Defects in Advanced Silicon TechnologyPoint Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent ModelsObservation of Vacancy Enhancement during Rapid Thermal Annealing in NitrogenStrain and Gettering in Epitaxial Silicon WafersStrain in Silicon below Si3N4 Stripes, Comparison between SUPREM IV Calculation and TEM/CBED MeasurementsDefects Produced in Silicon by Reactive Ion EtchingDepth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted SiliconHydrogen Stimulated Destruction of Fe-B Pairs in p-SiDifferential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si WafersEffect of Stress Induced Defects on Electrical Properties of Czochralski Grown SiliconPlanar Solidification of Multicrystalline Silicon for Phtovoltaic ApplicationsImplementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device ProcessingGe Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single CrystalsOn the Defect Structures in Te-Doped GaAsStudy of Surface Conduction Related Effects in GaAs MESFET'sNitridation Effects in n-CdTeFormation of Grown-in Defects in CZ-Si CrystalsX-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or SiliconPeculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid SolutionComputer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model)Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction DiodesAn Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal DiffractometryPositron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-SiCapacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low TemperaturesRaman Spectroscopy Investigation of Silicon Nanocrystals Formation in Silicon Nitride FilmsRaman and HREM Observation of Oriented Silicon Nanocrystals Inside Amorphous Silicon Films on Glass SubstratesA Model of Coupled Diffusion of Impurity Atoms and Point Defects in the Vicinity of Semiconductor Interfaces and Grain BoundariesNew Possibility of Impurities Express Determination by Laser Element Spark-Analyzer (LESA)Analytical Modeling of the Gold Diffusion Induced Modification of the Forward Current through P-N Silicon Junctions