Sonstiges, Englisch, 1670 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1670 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-0357-1919-2
Verlag: Trans Tech Publications
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
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Reduction of Dislocations in the Bulk Growth of SiC Crystals The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single CrystalsFundamental Limitations of SiC PVT Growth Reactors with Cylindrical HeatersHalide-CVD Growth of Bulk SiC CrystalsGrowth Kinetics and Polytype Stability in Halide Chemical Vapor Deposition of SiCEnhanced Carrier Lifetime in Bulk-Grown 4H-SiC SubstratesGrowth of Micropipe Free Crystals on 4H-SiC {03-38} SeedsGrowth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)Growth and Characterization of Large Diameter 6H and 4H SiC Single CrystalsGrowth of SiC Boules with Low Boron ConcentrationResistivity Distribution in Undoped 6H-SiC Boules and WafersThe Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder SourceA Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiCIn Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray ImagingGrowth and Surface Morphologies of 6H SiC Bulk and Epitaxial CrystalsProcessing of Poly-SiC Substrates with Large Grains for Wafer-BondingModeling and Experimental Verification of SiC M-PVT Bulk Crystal GrowthBasal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiCHigh Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible DesignActive Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal GrowthThe Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation MethodPolytype Control in 6H-SiC Grown via Sublimation MethodCharacterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT MethodHybrid Physical-Chemical Vapor Transport Growth of SiC Bulk CrystalsSiC HTCVD Simulation Modified by Sublimation EtchingGas Fed Top-Seeded Solution Growth of Silicon CarbideGrowth of SiC Single Crystal from Si-C-(Co, Fe) Ternary SolutionSolution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation TechniqueGrowth of Cubic Silicon Carbide Crystals from SolutionRecent Progress of SiC Hot-Wall Epitaxy and Its ModelingChallenges in Large-Area Multi-Wafer SiC Epitaxy for Production NeedsTechniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power DevicesInvestigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface RoughnessSiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter WafersEpitaxial Layers Grown with HCl Addition: A Comparison with the Standard ProcessLower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas PrecursorInvestigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon PrecursorHomoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon PrecursorSiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon PrecursorProperties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis SubstratesHigh Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVDHomoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor DepositionHighly Uniform SiC Epitaxy for MESFET FabricationOptimisation of Epitaxial Layer Growth by Schottky Diodes Electrical CharacterizationHigh Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 SourcesSelective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC SubstratesProposal of the Thermal Equilibrium Model for SiC Hydrogen Etching PhenomenaHomoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating PropertyEpitaxial Growth of 4H-SiC on 4? Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVDEpitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor DepositionStability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiCComparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) EpitaxyAb Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) SurfaceThick Epitaxial Layers on 4? Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kVGrowth of Low Basal Plane Dislocation Density SiC Epitaxial LayersExperimental Observations of Extended Growth of 4H-SiC Webbed CantileversSiC Migration Enhanced Embedded Epitaxial (ME3) Growth TechnologyCVD Epitaxial Growth of 4H-SiC on Porous SiC SubstratesStudies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1?-Off Substrate by Closed-Space Sublimation MethodEpitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal FurnaceUsing Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis a-SiC (0001) at Low TemperatureImprovement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based MeltsRelaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC MesasStructure Evolution of 3C-SiC on Cubic and Hexagonal SubstratesSingle-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism?Switch-Back Epitaxy? as a Novel Technique for Reducing Stacking Faults in 3C-SiCGrowth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt ModificationHetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVDSelective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD ReactorGrowth of 3C-SiC on Si Molds for MEMS ApplicationsNitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor DepositionMulti-Scale Simulation of MBE-Grown SiC/Si NanostructuresTheory of Dislocations in SiC: The Effect of Charge on Kink MigrationStructure of Carrot Defects in 4H-SiC EpilayersCharacterization of SiC Crystals by Using Deep UV Excitation Raman SpectroscopyStructures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman SpectroscopyRaman Scattering Analyses of Stacking Faults in 3C-SiC CrystalsObservation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiCStacking Faults and 3C Quantum Wells in Hexagonal SiC PolytypesSilicon Carbide: A Playground for 1D-Modulation ElectronicsPeierls Barriers and Core Properties of Partial Dislocations in SiCCharacterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n DiodesRecombination Behaviour of Stacking Faults in SiC p-i-n DiodesPerformance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free EpilayersObservation of Shrinking and Reformation of Shockley Stacking Faults by PL MappingInvestigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core ReconstructionOverlapping Shockley/Frank Faults in 4H-SiC PiN DiodesExamining Dislocations in SiC Epitaxy by Light Emission from Simple Diode StructuresPhotoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation MethodInvestigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted InterfaceOrigin of Surface Morphological Defects in 4H-SiC Homoepitaxial FilmsStructure of ?Star? Defect in 4H-SiC Substrates and EpilayersSynchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single CrystalSimulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-EpilayersDevelopment of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC EpilayersWhy Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current MethodEffect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDsStructural Defects and Critical Electric Field in 3C-SiCGiant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force MicroscopyOpen Core Dislocations and Surface Energy of SiCComparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC SubstratesA New Method of Mapping and Counting Micropipes in SiC WafersIdentification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray DiffractometryOptical Studies of Deep Centers in Semi-Insulating SiCInvestigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical TechniquesHigh Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical InsightNon-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC CrystalsOrigin of the Up-Conversion Process in 4H SiCA Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiCInvestigation of the Displacement Threshold of Si in 4H SiCLong Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient SpectroscopyDeep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiCDeep Traps and Charge Carrier Lifetimes in 4H-SiC EpilayersDeep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor DepositionDeep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient SpectroscopyDeep Level near EC ? 0.55 eV in Undoped 4H-SiC SubstratesDeep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current SpectroscopyQuenching Photoconductivity and Photoelectric Memory in 6H-SiCDeep Level Point Defects in Semi-Insulating SiCDivacancy and Its Identification: TheoryDivacancy Model for P6/P7 Centers in 4H- and 6H-SiCThermal Evolution of Defects in Semi-Insulating 4H SiCEvidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR StudySignature of the Negative Carbon Vacancy-Antisite ComplexElectron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiCRelationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC PolytypesCarbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiCIdentification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic ResonancePossible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiCTrapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiCIdentification of Deep Level Defects in SiC Bipolar Junction TransistorsVacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic ResonanceClustering of Vacancies in Semi-Insulating SiC Observed with Positron SpectroscopyElectronic Raman Studies of Shallow Donors in Silicon CarbideEvidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiCPhotoluminescence of Phosphorous Doped SiCShallow P Donors in 3C-, 4H- and 6H-SiCDependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping ConcentrationDonor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiCA Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC LayersNew Aspects in n-type Doping of SiC with PhosphorusConditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC SubstratesEvaluating and Improving SIMS Method for Measuring Nitrogen in SiCKinetic Mechanisms for the Deactivation of Nitrogen in SiCElectrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor DepositionAccurate CsM+ SIMS Aluminum Dopant Profiling in SiCResults of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped a-SiC Substrates Grown by the M-PVT MethodIn-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC SubstratesElectronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different PolytypesThe Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiCLuminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiCCo-Doping of Er-Doped SiC with Oxygen ? A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?Europium Induced Deep Levels in Hexagonal Silicon CarbideCathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron SputteringHydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface MetallizationTemperature Induced Phase Transformation on the 4H-SiC(11-20) SurfaceSiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface AlloyLow Energy Ion Modification of 3C-SiC SurfacesPhonons in SiC from INS, IXS, and Ab-Initio CalculationsInfrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor DepositionPrecise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single CrystalsThermal Lens Technique for the Determination of SiC Thermo-Optical PropertiesWannier-Stark Ladder and Negative Differential Conductance in 4H-SiCCharacterization of SiC Wafers by Photoluminescence MappingCorrelation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon CarbideSimple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence ImagingSiC Substrate Doping Profiles Using Commercial Optical ScannersCharacterization of SiC Substrates Using X-Ray Rocking Curve MappingMicrowave Dielectric Loss Characterization of Silicon Carbide WafersColumnar Pore Growth in n-Type 6H SiCA Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiCBrillouin Spectra of Porous p-Type 6H-SiCColumnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other ApplicationsNovel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVDSol-Gel Silicon Carbide for Photonic ApplicationsFormation, Morphology and Optical Properties of SiC NanopowderA Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD ReactorFabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect TransistorThermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)Ion Implantation Processing and Related Effects in SiCAdvances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC DevicesAnnealing Behavior of N+-Implantation-Induced Defects in SiC at Low TemperaturesImpact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC LayersImpurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA EquipmentDevelopment and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation AnnealingCorrelation between Current Transport and Defects in n+/p 6H-SiC DiodesCurrent Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar AmbientIon Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD ReactorLaser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN DiodesExtracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity MeasurementsVariations in the Effects of Implanting Al at Different Concentrations into SiCEffect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature AnnealingPost-Implantation Annealing in a Silane Ambient Using Hot-Wall CVDKick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing ProcessesObservation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by LuminsescenceHigh Dose High Temperature Ion Implantation of Ge into 4H-SiCHydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing SequencesAn Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal ContactsNi Graphite Intercalated Compounds in Ohmic Contact Formation on SiCOhmic Contact for C-face n-Type 4H-SiC with Reduced Graphite PrecipitationStructural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature AnnealingDie Bonding Issues on Silicon Carbide DiodesComposite Ohmic Contacts to SiCTantalum-Ruthenium Diffusion Barriers for Contacts to SiCInvestigation of TiW Contacts to 4H-SiC Bipolar Junction DevicesCharacterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron SpectroscopiesOhmic Contacts to P-Type Epitexial and Imlanted 4H-SiCOhmic Contacts on p-Type SiC Using Al/C FilmsTi/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiCNanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal DiodesA Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiCFormation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite EncapsulationDiffusion Welding Techniques for Power SiC Schottky PackagingEvaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiCComparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier DiodesHigh Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche BreakdownSi/SiO2 and SiC/SiO2 Interfaces for MOSFETs ? Challenges and AdvancesNitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC InterfaceImpact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO DielectricsHigh Channel Mobility 4H-SiC MOSFETsImproved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300?C NO AnnealCharacterization of 4H-SiC MOSFETs with NO-Annealed CVD OxideInvestigation of SiO2-SiC Interface by High-Resolution Transmission Electron MicroscopeInterfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation AmbientEffect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiCImproved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O AnnealingNitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-InterfacesProcess-Dependent Charges and Traps in Dielectrics on SiCLow-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiCOff-Angle Dependence of Characteristics of 4H-SiC-Oxide InterfacesOn Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR StudyWhere Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC SurfacesEllipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC SurfacesReal Time Observation of SiC Oxidation Using an In Situ EllipsometerFast Non-Contact Dielectric Characterization for SiC MOS ProcessingHigh Temperature Reliability of SiC n-MOS Devices up to 630 ?CHigh Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1?) Off-AnglePECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) FacesProcess Optimisation for 4H-SiC MOSFET ApplicationsDetermination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETsHigh Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiCExperimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) InterfaceStructural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor DepositionElectrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2OTheoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k DielectricsPreparation and Evaluation of Damage Free Surfaces on Silicon CarbideSelectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon CarbideAugmented CMP Techniques for Silicon CarbideCharacterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS ApplicationsMechanical Testing of Flexible Silicon Carbide Interconnect RibbonsMicromachining of Novel SiC on Si Structures for Device and Sensor ApplicationsDeep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate ProcessVia Hole Formation in Silicon Carbide by Laser MicromachiningDevelopment of a Microstrip SiC MMIC ProcessEnergy Efficiency: The Commercial Pull for SiC DevicesSiC Device Applications: Identifying and Developing Commercial ApplicationsDevelopments in Hybrid Si ? SiC Power ModulesAlmost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier DiodesElectrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical ModellingA Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC ApplicationsPerformance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT ModulesCorrelation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky DiodesDesign and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO2/High-K Dielectric StackFabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical PropertiesOptimization of a SiC Super-SBD Based on Scaling Properties of Power DevicesFast Switching (41 MHz), 2.5 mO?cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications10 kV, 87 mOcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect TransistorsDesign, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETsAnalytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFETDesign Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching OperationLow On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal MaskSiC Smart Power JFET Technology for High-Temperature ApplicationsInherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFETCurrent Sensing for SiC Power DevicesFabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mO?cm2RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction TransistorsSiC MESFET with a Double Gate RecessHigh Power High Efficiency Lateral Epitaxy MESFETs in Silicon CarbideRF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC SubstrateHigh-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride PassivationDouble Gate 180V-128mA/mm SiC-MESFET for Power Switch ApplicationsThe Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V CharacteristicsTime Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETsSiC Power MOSFETs ? Status, Trends and ChallengesDevelopment of 8 mO-cm2, 1.8 kV 4H-SiC DMOSFETs4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation AnnealOptimum Design of Short-Channel 4H-SiC Power DMOSFETsRealization of Large Area Vertical 3C-SiC MOSFET DevicesHigh Power-Density 4H-SiC RF MOSFETs4.3 mOcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFETFabrication and Performance of 1.2 kV, 12.9 mOcm2 4H-SiC Epilayer Channel MOSFETSwitching Characteristics of SiC-MOSFET and SBD Power ModulesCharacterization of 4H-SiC MOSFETs Formed on the Different Trench SidewallsThe Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) SubstratesFabrication of 4H-SiC p-Channel MOSFET with High Channel MobilityReduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETsFabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400?C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation FurnaceA Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET DevicesBias Stress-Induced Threshold-Voltage Instability of SiC MOSFETsUsing a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device SimulationOptimisation of 4H-SiC MOSFET Structures for Logic ApplicationsEvolution of Drift-Free, High Power 4H-SiC PiN DiodesMeasurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiCHigh-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction DiodesAbout the Nature of Recombination Current in 4H-SiC pn StructuresCharge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion MicrobeamsDemonstration of a 4H SiC Betavoltaic CellHigh Current 6 kV 4H-SiC PiN Diodes for Power Module Switching ApplicationsDynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward DegradationImproving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial RefillCharacteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped AnnealingDemonstration of High-Voltage 4H-SiC Bipolar RF Power LimiterInvestigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 ?C Temperature RangeCM-Wave Modulator with High-Voltage 4H SiC pin DiodesNumerical Investigation of SiC Devices Performance Considering the Incomplete Dopant IonizationHigh Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact LayerAdvances in SiC GTO Development and Its ApplicationsA 1cm ? 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current ModulesSimulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction RectifierSimulations of 10 kV Trench Gate IGBTs on 4H-SiCInfluence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTsFirst Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs1836 V, 4.7 mO?cm2 High Power 4H-SiC Bipolar Junction Transistor4H-SiC Bipolar Transistors with UHF and L-Band OperationCurrent Gain Dependence on Emitter Width in 4H-SiC BJTsOptimization of the Specific On-Resistance of 4H-SiC BJTsPerformance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar TransistorsHigh Temperature Characterization of 4H-SiC Bipolar Junction TransistorsAnalysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200?C Baseplate TemperatureDevice Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching DevicesNovel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)SiC-Based MOSFETs for Harsh Environment Emissions SensorsDevelopment of Ultra High Sensitivity UV Silicon Carbide DetectorsSilicon Carbide Power Diodes as Radiation DetectorsMinimum Ionizing Particle Detector Based on p+n Junction SiC DiodeRadiation Hard Devices Based on SiCThe Limit of SiC Detector Energy Resolution in Ion SpectometryReduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiCMolecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC SubstratesSurface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich ConditionThe Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates Growth of AlN and AlN-SiC Solid Solution by Sublimation Method Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network TemplatesElectron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiCStrain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC SubstratesAnisotropic Properties of GaN Studied by Raman ScatteringStructural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC SubstratesAsymmetric Interface Densities on n and p Type GaN MOS CapacitorsEffects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force MicroscopyQuantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall MeasurementsGrowth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC HeterostructuresStructural Properties and Electrical Characteristics of Homoepitaxial GaN PiN DiodesElectron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar TransistorsDirect Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)GaN Resistive Gas Sensors for Hydrogen DetectionAtomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiCEffect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)Optical Characterization of ZnO Materials Grown by Modified Melt Growth TechniqueThe Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for DevicesRole of Oxygen in Growth of Carbon Nanotubes on SiCStructural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface DecompositionFirst Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type DislocationSNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD Diamond
