Large Scale Integrated Circuits Technology: State of the Art and Prospects

Proceedings of the NATO Advanced Study Institute on "Large Scale Integrated Circuits Technology: State of the Art and Prospects", Erice, Italy, July 15-27, 1981
1982. Auflage 1982
ISBN: 978-90-247-2725-4
Verlag: Springer

Buch, Englisch, Band 55, 784 Seiten, Gewicht: 1340 g

Reihe: NATO Science Series E:

A NATO Advanced Study Institute on "Large Scale Integrated Circuits Technology: State of the Art and Prospects" was held at Ettore Majorana Centre for Scientific Culture, Erice (Italy) on July 15-27, 1981, the first course of the International School of Solid-State Device Research. This volume contains the School Proceedings: fundamentals as well as up-to-date information on each subject presented by qualified authors. The material covered in this volume has been arranged in self-consistent chapters. Therefore, the Proceedings may be used as a suitable textbook or authoritative review for research workers and advanced students in the relevant field. The nascent information society is based on advanced technologies which will revolutionize human abilities to manipulate and communicate information. One of the most important underpinnings for developing such an information society lies in innovations in semiconductor microelectronics. Such innova­ tions, indeed, are dramatically reducing the cost of transmitting, storing, and processing information with improved performance, ushering in an era charac­ terized by large scale integration -the subject of this book.

Zielgruppe

Research

Autoren/Hrsg.

Esaki, Leo

Soncini, G.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren

Inhaltsverzeichnis

I. Overview.- Semiconductor Devices and the Role of Physics in Their Development.- LSI: Prospects and Problems.- II. Silicon Technology.- Silicon Crystals for Large Scale Integrated Circuits.- Structural Techniques for Bulk Defects Characterization.- III. Processing.- Planar Processing: Silicon Oxidation.- Planar Processing: Diffusion.- Ion Implantation.- Silicon Epitaxy.- Computer Simulation of Complete IC Fabrication Process.- Beam Processing Techniques Applied to Crystal Silicon Substrates.- Lithography Systems for VLSI.- IV. Bipolar Devices.- Bipolar Linear Integrated Circuits.- Bipolar Digital Circuits.- Advanced Bipolar Devices and Related Problems.- V. Mos Devices.- MOS Technologies and Devices for LSI.- Silicon on Insulator Integrated Circuits.- Advanced Silicon MOS Devices and Related Problems.- VI. Reliability.- Semiconductor Component Accelerated Testing and Data Analysis.- Basic Integrated Circuit Failure Mechanisms.- VII. Future Trends.- Miniaturization Limits for MOS Technology.- Physics of Submicron Devices.- The Role of GaAs in High Speed Integrated Circuits.- Josephson Integrated Circuits.