Feng | Handbook of Zinc Oxide and Related Materials | E-Book | sack.de
E-Book

E-Book, Englisch, 446 Seiten

Feng Handbook of Zinc Oxide and Related Materials

Volume One, Materials
Erscheinungsjahr 2012
ISBN: 978-1-4398-5571-3
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

Volume One, Materials

E-Book, Englisch, 446 Seiten

ISBN: 978-1-4398-5571-3
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)



Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO.

Volume One presents fundamental knowledge on ZnO-based materials and technologies. It covers the basic physics and chemistry of ZnO and related compound semiconductors and alloys. The first part of this volume discusses preparation methods, modeling, and doping strategies. It then describes epitaxial methods used to create thin films and functional materials. The book concludes with a review of alloys and related materials, exploring their preparation, bulk properties, and applications.

Covering key properties and important technologies of ZnO-based devices and nano-engineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.

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Zielgruppe


Device engineers involved in design and processing, physicists, materials scientists, semiconductor and solid state scientists, nanoscientists and technologists, and researchers in electronic materials and devices.


Autoren/Hrsg.


Weitere Infos & Material


ZnO Basic
Brief Historical Review of Research and Basic/Interdisciplinary Characterization of ZnO, Zhe Chuan Feng
Pressurized Melt Growth of ZnO Single Crystals, Jeff Nause
New Design and Development of MOCVD, Process and Modeling for ZnO-Based Materials, G.S. Tompa and S. Sun
p-Type ZnO: Current Status and Perspective, Zhizhen Ye, Haiping He, Jianguo Lu, and Liping Zhu

ZnO Epitaxy
ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects, and Doping, S.J. Chua, C.B. Tay, and J. Tang
Second Harmonic Generation and Related Studies on ZnO Films, Maria Cristina Larciprete and Mario Bertolotti
Optical Properties and Carrier Dynamics of ZnO and ZnO/ZnMgO Multiple Quantum Well Structures, Bong-Joon Kwon and Yong-Hoon Cho
p-Type ZnO-N Films: Preparation and Characterization by Synchrotron Radiation, C.W. Zou and W. Gao
Optical Properties of MgZnO/ZnO Heterostructures Grown on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy, Y.M. Lu, P.J. Cao, W.J. Liu, D.L. Zhu, X.C. Ma, D.Z. Shen, and X.W. Fan

ZnO Alloys
The (Mg,Zn)O Alloy, Holger von Wenckstern, Rüdiger Schmidt-Grund, Carsten Bundesmann, Alexander Müller, Christof P. Dietrich, Marko Stölzel, Martin Lange, and Marius Grundmann
Growth and Characterizations of Zn(Mg,Cd)O Alloys and Heterostructures Using Remote-Plasma-Enhanced MOCVD, Kenji Yamamoto and Jiro Temmyo
Structural and Optical Properties of Zn1-xCuxO Thin Films, Ram S. Katiyar and Kousik Samanta
Structural and Magnetic Properties of ZnO Alloy Films with Cu, Cr, and Fe by RF Magnetron Sputtering Technique, X.M. Wu, L.J. Zhuge, Z.F. Wu, and C.G. Jin

Index


Zhe Chuan Feng is a professor in the Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering at National Taiwan University. Dr. Feng has previously worked at Emory University, National University of Singapore, EMCORE Corporation, Institute of Materials Research and Engineering in Singapore, Axcel Photonics, and Georgia Tech. He has edited/coedited nine books and published roughly 500 scientific papers. His work focuses on materials research and MOCVD growth of LED, III-Nitrides, SiC, ZnO, and other semiconductors/oxides.



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