Feng | Handbook of Zinc Oxide and Related Materials | Buch | 978-1-4398-5574-4 | sack.de

Buch, Englisch, 562 Seiten, Format (B × H): 183 mm x 260 mm, Gewicht: 1242 g

Feng

Handbook of Zinc Oxide and Related Materials

Volume Two, Devices and Nano-Engineering
1. Auflage 2012
ISBN: 978-1-4398-5574-4
Verlag: CRC Press

Volume Two, Devices and Nano-Engineering

Buch, Englisch, 562 Seiten, Format (B × H): 183 mm x 260 mm, Gewicht: 1242 g

ISBN: 978-1-4398-5574-4
Verlag: CRC Press


Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO.

Volume Two focuses on devices and nanostructures created from ZnO and similar materials. The book covers various nanostructures, synthesis/creation strategies, device behavior, and state-of-the-art applications in electronics and optoelectronics. It also provides useful information on the device and nanoscale process and examines the fabrication of LEDs, LDs, photodetectors, and nanodevices.

Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.

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Zielgruppe


Device engineers involved in design and processing, physicists, materials scientists, semiconductor and solid state scientists, nanoscientists and technologists, and researchers in electronic materials and devices.


Autoren/Hrsg.


Weitere Infos & Material


Part I ZnO-Based Nanostructures: Metalorganic Chemical Vapor Deposition and Characterization of ZnO-Based Nanostructures and Thin Films. Solution Grown n-Type ZnO Nanostructures: Synthesis, Microstructure and Doping. Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p-n Junction. ZnO-Based Nanostructures. Part II ZnO-Based Optoelectronic Devices: Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions. Light-Emitting Diodes Based on n-ZnO/n-Si(GaAs) Isotype Heterojunction. ZnO Thin Films, Quantum Dots, and Light-Emitting Diodes Grown by Atomic Layer Deposition. Hybrid Light-Emitting Diodes Based on ZnO Nanowires. ZnBeMgO Alloys and UV Optoelectronic Applications. Ultraviolet ZnO Random Laser Diodes. Part III ZnO-Based Electronic Devices and Applications: Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides. The Growth of ZnO for Neutron Detection. Amorphous In–Ga–Zn–O Thin-Film Transistors: Fabrication and Properties. Index.


Zhe Chuan Feng is a professor in the Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering at National Taiwan University. Dr. Feng has previously worked at Emory University, National University of Singapore, EMCORE Corporation, Institute of Materials Research and Engineering in Singapore, Axcel Photonics, and Georgia Tech. He has edited/coedited nine books and published roughly 500 scientific papers. His work focuses on materials research and MOCVD growth of LED, III-Nitrides, SiC, ZnO, and other semiconductors/oxides.



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