Fisher | Dislocation Reactions and Stacking-Fault Energies | Buch | 978-3-03785-477-8 | sack.de

Buch, Englisch, 284 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 640 g

Fisher

Dislocation Reactions and Stacking-Fault Energies


Erscheinungsjahr 2012
ISBN: 978-3-03785-477-8
Verlag: Trans Tech Publications

Buch, Englisch, 284 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 640 g

ISBN: 978-3-03785-477-8
Verlag: Trans Tech Publications


Volume is indexed by Thomson Reuters BCI (WoS).Volume 329 of the journal, Defect and Diffusion Forum, comprises a handy compilation of data on dislocation reactions, and stacking-fault energies for a wide range of materials including carbon, carbides, nitrides, oxides, silica, silicates and borides. It also contains original papers on the Interaction with Vacancies in Tungsten, Defects in Pure Aluminum and 3003 Aluminum Alloy, Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying, Activation Enthalpy for Defect Formation in 5754 Alloys, Defect Analysis of 316LSS during Powder Injection Moulding, Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube, Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys, Artificial Ageing Effect on 2024 Alloy, Natural Convection Flow Simulation of Nanofluid in a Square Cavity, Theoretical Models for Point Defect Calculations, Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution, Pressureless Sintering and Characterization of Al2O3-SiO2-ZrO2 Composites, Electrical Properties of Zr-Doped La2O3 Nanocrystallites, Effect of Post-Deposition Annealing on Optical Properties of Thermally-Evaporated V2O5 Thin Film, Electrical Conductivity and Phase Transition Studies in the ZrO2-CdO System, Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition, Observation of Dielectric Peaks in Glassy Se70Te20Sn10 Alloy, Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)4Cl2]5- Complex in NaCl.
Fisher Dislocation Reactions and Stacking-Fault Energies jetzt bestellen!

Autoren/Hrsg.


Weitere Infos & Material


Parameters of Interaction with Vacancies in Tungsten of Homovalent Atomic Probes from the VIB and VIIB Groups of the Periodic Table
Study of Production Defects in Pure Aluminum and 3003 Aluminum Alloy by Electrical Measurements
Study of Nanocrystalline NiAl Alloys Prepared by Mechanical Alloying
Estimating the Activation Enthalpy for Defect Formation in 5754 Alloys by Using Nuclear, Electrical and Mechanical Methods
Defect Analysis of 316LSS during the Powder Injection Moulding Process
Effect of Hydrogen on the Microhardness of Tin Brass Heat Exchanger Tube
Correlation between Nuclear and Electrical Methods for Estimating the Activation Enthalpy of Defect Formation in 2024 Alloys
Artificial Ageing Effect on Mechanical, Electrical Properties and Positron Lifetime of Aircraft 2024 Alloy
Natural Convection Flow Simulation of Nanofluid in a Square Cavity Using an Incompressible Generalized Lattice Boltzmann Method
A Review of some Theoretical Models for Point Defect Calculations
The Diffusion Problem of New Phase Inclusion Growth in Bounded Regions of Oversaturated Solid Solution
Pressureless Sintering and Characterization of Al2O3-SiO2-ZrO2 Composite
Electrical Properties of Zr-Doped La2O3 Nanocrystallites as a Good Gate Dielectric
Effect of Post-Deposition Annealing on some Optical Properties of Thermally-Evaporated V2O5 Thin Film
Electrical Conductivity and Phase Transition Studies in the ZrO2-CdO System
Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition
Observation of Dielectric Peaks in Glassy Se70Te20Sn10 Alloy
Theoretical Investigation of the Spin Hamiltonian Parameters for the Tetragonal [Fe(CN)4Cl2]5– Complex in NaCI


Ihre Fragen, Wünsche oder Anmerkungen
Vorname*
Nachname*
Ihre E-Mail-Adresse*
Kundennr.
Ihre Nachricht*
Lediglich mit * gekennzeichnete Felder sind Pflichtfelder.
Wenn Sie die im Kontaktformular eingegebenen Daten durch Klick auf den nachfolgenden Button übersenden, erklären Sie sich damit einverstanden, dass wir Ihr Angaben für die Beantwortung Ihrer Anfrage verwenden. Selbstverständlich werden Ihre Daten vertraulich behandelt und nicht an Dritte weitergegeben. Sie können der Verwendung Ihrer Daten jederzeit widersprechen. Das Datenhandling bei Sack Fachmedien erklären wir Ihnen in unserer Datenschutzerklärung.