Gettering and Defect Engineering in Semiconductor Technology VIII

Erscheinungsjahr 1999
ISBN: 978-3-0357-0906-3
Verlag: Trans Tech Publications

Sonstiges, Englisch, 628 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field.

Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view.

Autoren/Hrsg.

Grimmeiss, Hermann G.

Ask, L.

Kleverman, Mats

Kittler, Martin

Richter, Hans

Inhaltsverzeichnis

Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade BeyondSelf-Assembling Si/SiGe Nanostructures for Light EmittersThe Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in OptoelectronicsAcoustically Driven Optical Parameters in ?-? Photonic MaterialsGrowth-Defects and Process-Induced Defects in SiGe-Based HeterostructuresStatus, Hopes and Limitations for the Si: Er-based 1.54 ?m EmitterOxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon WafersGrown-in Defects in High Temperature Annealed Si WafersHydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'Relaxation of Misfit Induced Strain in Si-Based HeterostructuresMaterials Quality and Materials Cost - Are they on a Collision Course?Defect Engineering in the Development of Advanced Silicon Crystals and Wafers200 GHz Potential of Si-Based DevicesSilicon Materials Engineering for the Next MillenniumElectrical Characterization of As-Grown and Thermally Treated 8'' Silicon WafersEquilibrium Critical Thickness of Strained Buried SiGe LayersImproved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si WafersDefect Control in Nitrogen Doped Czochralski Silicon CrystalsGrowth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS StructuresInteraction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar CellsInteraction between Point Defects and Dislocations in SiGeRadiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained LayersESR Investigations of Modulation-Doped Si/SiGe Quantum WellsShallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski SiliconX-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si SuperlatticesRadiation Defects Formation in SiOxygen and Peculiarities of its Precipitation in SiThe Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces AbruptnessVacancy-Gettering in Silicon: Cavities and Helium-ImplantationGettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed SiliconIron Gettering on Cavities Produced by Helium ImplantationGettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted SiliconLaser-Stimulated Gettering Processes in CdxHg1-xTe Solid SolutionsGettering Strength Assessment Based on Lifetime MeasurementsImpurity Gettering Investigation in the Si-SiO2 SystemComputer Simulation of Gettering Induced Oxygen Redistribution in SOI StructuresSurface Gettering Background Impurities and Defects in GaAs PlatesGettering Processes for the Preparation of Silicon Solar Cell MaterialGettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and AnnealingOxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated TemperaturesInfrared Vibrational Bands Related to Thermal Donors in GermaniumNew Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in SiliconExperimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar SiliconThe Segregation Behaviour of Oxygen at Dislocations in SiliconAbout the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800?C RangePositron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR SpectraThe Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced CentresEffect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted SiliconThe Nature of Precursors for the Thermal Donor Formation in SiliconPhotoluminescence of Erbium-Doped Silicon: Temperature DependenceRare Earth Impurities and Impurity-Related Centers in SiliconDefect Engineering in Si: Ho Light-Emitting Structure TechnologyComparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE MethodPre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron BeamIon Beam Doping of 6H-SiC for High Concentration p-Type LayersIn-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy IonsInteraction of Hydrogen with Radiation-Induced Defects in Cz-Si CrystalsThe Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski SiliconTemperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast BehaviourExperimental and Theoretical Study on Interaction Processes for 60? Short Dislocation Segments with Precipitation Centers in Si-CrystalsUltrasonic Influence on Dislocation Dynamics in SiliconP-N- Junction Peripheral Current Analysis using Gated Diode MeasurementsInvestigations of Extended Defects after Sulfur Diffusion in GaAsOn the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs SubstratesExtraction of Vacancy Parameters from Outdiffusion of Zinc from SiliconCu Determination in Silicon Wafers: A Comparison between Electrical and Chemical MeasurementsSingle Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETsVariations of Silicon Melt Convection in a Crucible with Boron AdditionElectrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and InsulatorsElectron Spin Resonance of the Pb Centers Associated with Oxygen Precipitates in Silicon CrystalsStructural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding TechniqueFormation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with ZincMagnetoplastic Effect in Compound SemiconductorsReconstruction of GaAs/AlAs (311) and (100) Interfaces: Raman StudySimulation of Point Defect Diffusion in SemiconductorsCorrelation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS ProcessingSilicon Impurity-Related Effects on Structural Defects in III-V NitridesReconstruction of Deep Level Defect Distribution from DLTS Measurements in Compensated SemiconductorsIdentification of Process Induced Defects in Silicon Power DevicesNondestructive Defect Characterization and Engineering in Contemporary Silicon Power DevicesRapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation ProcessesOriented Silicon Films on Glass Substrates for Device ApplicationsRadiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device PerformanceHydrogen Diffusion and Trapping in Microcrystalline SiliconSubstrate Material for sub-0.25?m Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced DiffusionAtomic Structure of Chalcogen-Hydrogen Complexes in SiliconElectric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution FilmsHydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems