Buch, Englisch, 369 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1190 g
Reihe: NATO Science for Peace and Security Series B: Physics and Biophysics
Buch, Englisch, 369 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1190 g
Reihe: NATO Science for Peace and Security Series B: Physics and Biophysics
ISBN: 978-1-4020-6379-4
Verlag: Springer Netherlands
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
- Naturwissenschaften Physik Quantenphysik
- Technische Wissenschaften Technik Allgemein Nanotechnologie
- Technische Wissenschaften Sonstige Technologien | Angewandte Technik Angewandte Optik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Verbundwerkstoffe
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
Weitere Infos & Material
Nanoscaled SOI Material and Device Technologies.- Status and trends in SOI nanodevices.- Non-Planar Devices for Nanoscale CMOS.- High-? Dielectric Stacks for Nanoscaled SOI Devices.- Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer.- Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates.- Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs.- Physics of Novel Nanoscaled SemOI Devices.- Integration of silicon Single-Electron Transistors Operating at Room Temperature.- SiGe Nanodots in Electro-Optical SOI Devices.- Nanowire Quantum Effects in Trigate SOI MOSFETs.- Semiconductor Nanostructures and Devices.- MuGFET CMOS Process with Midgap Gate Material.- Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs.- SiGeC HBTs: impact of C on Device Performance.- Reliability and Characterization of Nanoscaled SOI Devices.- Noise Research of Nanoscaled SOI Devices.- Electrical Characterization and Special Properties of FINFET Structures.- Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs.- Investigation of Compressive Strain Effects Induced by STI and ESL.- Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology.- Theory and Modeling of Nanoscaled Devices.- Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems.- Electron Transport in Silicon-on-Insulator Nanodevices.- All Quantum Simulation of Ultrathin SOI MOSFETs.- Resonant Tunneling Devices on SOI Basis.- Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.- Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL andSubthreshold Swing of Cylindrical Gate all Around Mosfets.