Sonstiges, Englisch, 320 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 320 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-0357-0936-0
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).
Autoren/Hrsg.
Weitere Infos & Material
Future Challenges for Cleaning in Advanced MicroelectronicsOpen Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric LayersWet Etch Enhancement of HfO2 Films by Implant ProcessingBehaviour of High-k Dielectric Materials with Classical Cleaning ChemistriesIntroduction of High-k Materials into Wet Processing, Analysis and BehaviorMetallic Impurity Contamination from Tungsten Gate CleaningSingle Chemistry Cleaning Solutions for Advanced Wafer CleaningSingle Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-SpectroscopyComplexing Agents Employed in Single Chemistry Cleaning: Stability Studies Using HPLCStability and Residue Studies of Complexing Agents in SC-1 BathSingle Wafer Immersion Process Incorporating a Novel Megasonics Configuration with an Advanced IPA Vapor Condensation DryMetallic Contamination Removal Evaluation for Single Wafer ProcessingProcedure to Evaluate Particle-Substrate Interaction during Immersion in LiquidSurfactant Selection for AM Clean in a Single Wafer Oasis Wet SystemInvestigating Post CMP Cleaning Processes for STI Ceria SlurriesLong-Term Effect of Transportation on Particle Concentrations in Various Process ChemicalsA New Industrial Etching & Drying Process for MEMS to Prevent Collapse of MicrostructuresIn Situ SymflowTM Etching in an STG? DryerHigh Uniformity Wet Processing for Qxide Thinning and Polymer Cleaning ApplicationsWet Oxide Etching of Dual Gate Oxide for 0.13?m Technologies and Beyond: Interaction with Photoresist and EquipmentA Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF AnalysisRelation between Surface Contamination of Metals and Defect Formation in Si during Oxidation of Bulk- and SOI-WafersEvaluation of Ultratrace Metallic Elements in Poly-SiGe Thin FilmsEffect of Additives on the Removal Efficiency of Photoresist by Ozone/DI-Water Processes: Experimental StudyOrganic Contamination: Purge Gas Impact in Plastic Storage BoxesFormation of Time-Dependent Haze on Silicon WafersCompatibility of Supercritical Co2-Based Stripping with Porous Ultra Low-k Materials and CopperBEOL Post Ash Residue Removal Using DSP* Chemistry in an FSI Batch Spray ToolBackside Cleaning for Copper RemovalEvaluation of Organic Contamination on Si Wafers in Fab EnvironmentsSelective Wet Etching of High-k Gate DielectricsInvestigation of Particle Removal from Silicon Surfaces by Means of Dry and Steam Laser CleaningA Comprehensive Model for Cleaning Semiconductor WafersEffect of Transient pH on Particle Deposition during Immersion RinsingInfluence of Hardware and Chemistry on the Removal of Nano-Particles in a Megasonic Cleaning TankInfluence of Frequency on the Removal Efficiency of Nano-Particles in a Megasonic Spray Cleaning ToolA Theoretical and Experimental Study of Damage-Free BEOL Cleaning with Megasonic AgitationRemoval of Small (<100-nm) Particles and Metal Contamination in Single-Wafer Cleaning ToolRelation between Particle Density and Haze on a Wafer: a New Approach to Measuring Nano-Sized ParticlesTXRF Analysis of Low Z Elements and TXRF-NEXAFS Speciation of Organic Contaminants on Silicon Wafer Surfaces Excited by Monochromatized Undulator RadiationForced Vapour-Phase Decomposition (FVPD) in Combination with e.g. TXRF - a Method to Determine Contamination in SiliconOn-Tool Real-Time Moisture Monitoring Provides Yield and Productivity BenefitsEffect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) SurfacesThermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR SpectroscopyModelling the Growth of Chemical Oxide for Advanced Surface PreparationWafer Surface Preparation Requirements for Next-Generation DevicesCleaning of Si Surfaces by Lamp IlluminationDefect-Free Si Thinning by In Situ HCI Vapour EtchingAdvanced Cylindrical Capacitor Formation Using Gas-Phase Selective EtchingGas-Phase HF/Vapor Etching of Thermal Silicon Dioxide FilmsElectrochemical Impedance Spectroscopic Characterization of Hydrophobic Coatings Deposited onto Pre-Oxidized SiliconCan we Increase the Effiency of Organic Contamination Removal by Ozone/DI-Water Processes by Using Additives?New Residue Removal Method Using Ozonated Water with Phosphoric AcidOzone-Gas Concentration Measurements for Photoresist StrippingAccelerated Removal of Photoresist for Semiconductor Production by an Increased-Pressure Ozone and Water Vapor ProcessNovel Photoresist Removal Using Atomic Hydrogen Generated by Heated Catalyzer'Resist / Wet Etch' Couple for Dual Gate OxideNew Contact Cleaning in HF & N2/H2 Microwave PlasmaCleaning after Contact Etching of Multi-Film Stack and Cobalt Disilicide: An XPS StudyAlternative Post-Etch Polymer Removal in a Single-Wafer PlatformAmmonium Nitrate Cleaning Process for Post Metal Photo-Resister RemovingPost Metal Etch Polymer Removal: A New CF4-Based Dry Plasma Process SequenceInfluences of Cleaning Conditions and Elapse after Etch on Via Resistance in Multi-Level Cu InterconnectsPost-Etch Cleaning Chemistries Evaluation for Low k-Copper IntegrationResist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson HighlandsTM ChamberCorrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP CleaningTribological Characterization of Post-CMP Brush ScrubbbingDefectivity Study of Cu Metallization Process by Dark- and Bright-Field InspectionNew Dry Tool after Cleaning of Low-k DielectricsSupercritical Carbon Dioxide Processing of Porous Methylsilsesquioxane(PMSQ) Low-k Dielectric FilmsSupercritical Carbon Dioxide Cleaning of Low-k MaterialRemoval of Heavy Organics by Supercritical CO2
