Sonstiges, Englisch, 340 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 340 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-0357-0916-2
Verlag: Trans Tech Publications
The proceedings of the Fifth International Symposium on Ultra Clean Processing of Silicon Surfaces cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Defects and Contamination in Microelectronic Device Production: State-of-the-Art and ProspectsThe Effect of Ion Implantation on the Metal Contamination of Silicon Surfaces in Aqueous SolutionBarium, Strontium and Bismuth Contamination in CMOS ProcessesAn Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM CapacitorChemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate StacksWettability Modification of Polysilicon for Stiction Reduction in Silicon Based Micro-electromechanical StructuresDual Gate Oxide for 0.18?m Technologies and Below: Optimization of the Wet Processing SequenceNew Aqueous Clean for Aluminum Interconnects: Part I. FundamentalsMetal Wet Cleaning with No Corrosion: A Novel ApproachNon-Contact Post Cu CMP Cleaning Using Megasonic EnergyImproved Phosphoric Acid Mixtures for Nitride StripSilicon Wafer Cleaning Processes Monitoring by the Surface Charge Profiler MethodNew Aqueous Clean for Aluminum Interconnects: Part II. ApplicationsSynchronous Schlieren Image Analysis of Megasonic Single Wafer CleaningDry Cleaning of Organic Contamination on Silicon Wafers Using Rapid Optical Surface TreatmentMaterials Compatibility and Organic Build-Up during Ozone-Based Cleaning of Semiconductor DevicesSurface Characterization after Different Wet Chemical CleansA Hydrogenated Water Application to Semiconductor ManufacturingInvestigation of Trace Metals Analyses of Dry Residue on Silicon Wafer Surfaces by TXRF and ICP-MSElectrochemical Study for the Characterization of Wet Silicon Oxide SurfacesPre-Diffusion Cleaning Using Ozone and HFNovel Back Side Processes for Copper and Pre-Lithography CleansOptimisations of SC-1 Conditions for Sub 0.18?m Technologies in an Industrial EnvironmentReduced Water Consumption for Post Clean Treatment and Metal Ion Contamination on VLSI StructuresPost SiN Etching Cleaning During Copper and Low K IntegrationWet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-ScaleDetection and Identification of Organic Contamination on Silicon SubstratesPreparation and Characterization of Time Dependent Haze on Silicon SurfacesSingle Chemistry Cleaning Solution for Advanced Wafer CleaningBehaviors of Metallic Contaminants in Si Wafer ProcessingIron Bulk Concentration Effect on the Yield & Reliability of Thin OxidesGap States at the Interface of Ultra-Thin Oxide and Organic Films on Si(100)Modification of Low-K SiCOH Film Porosity by a HF SolutionLayer-By-Layer Oxidation of SiliconThe Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic CharacterizationInfluence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2The Origins of Fluorine in Dry Ultrathin Silicon OxidesStructural and Electrical Characterization of Ultra-Thin SiO2 Films Prepared by Catalytic Oxidation MethodCharacterization of DI Water/O3 Oxidation of Si (100) and Si (111) Surfaces by OCP MeasurementsEffect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20? Thick Ultra-Thin Stack Gate DielectricsControlling Silicon Surface Roughness During Photochemical CleaningInfluence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon WafersCharacterization and Production Metrology of Thin Transistor Gate Dielectric FilmsElectronic Properties of Wet-Chemically Prepared Oxide LayersA Probe of Chemical Oxide Growth ConditionsFundamentals of Wafer Rinse Processes and the Interactions with Water Conservation and Recycling in Semiconductor Manufacturing PlantsA Novel Rinsing Tank Concept to Save DI Water Using an Internal Recirculation Flow: 'Circle Stream Rinser'Rinsing and Drying Effects on Heterogeneous SubstratesLow Consumption Front End of the Line Cleaning: LC-FEOLNew Single Wafer Double Sided Spin Cleaning MethodDetermination of Photoresist Degradation Products in O3/DI ProcessingThe Ozone Solubility and its Decay in Aqueous Solutions: Crucial Issues in Ozonated Chemistries for Semiconductor CleaningControl of Ozonated Water Cleaning Process for Photoresist RemovalNew Method to Generate the High Concentration Ozonated Water by Using the Ultrapure Water of the Semiconductor FactoryA Controlled Deposition of Organic Contamination and the Removal with Ozone Based CleaningsFrom Piranha to Barracuda: Mechanism of Ozone and Water Vapor Photoresist Strip in a Wet BenchPhoto Resist Stripping Using an Alkaline Accelerator Containing Wet-VaporMegasonic Silicon Wafer Cleaning and Its Influence on LSI DevicesApplication of Megasonic Single Wafer Cleaning Technology to LSI Mass Production LineParticle Removal Mechanism of Hydrogenated Ultrapure Water with Megasonic IrradiationMegasonic, Non-Contact Cleaning Followed by 'Rotagoni' Drying of CMP WafersParticle Deposition Studies in Acidic SolutionsParticle Removal Efficiency Evaluation at 40 nm Using Haze Particle StandardUse of Surfactants for Improved Particle Performance of dHF-Based Cleaning RecipesThe Role of Oxidant in HF-Based Solution for Noble Metal Removal from SubstrateEffect of Surface Charge and Fluid Properties on Particle Removal Characteristics of a Surface-Optimized REB FilterPattern Dependent Corrosion Effects in HF Based Post Cu CMP CleaningsEffect of Copper on the Breakthrough Voltage of Poly-Si - Poly-Si CapacitorsNew Insights into Particle AdhesionSC-1 Clean Improvements for Post STI CMPContamination and Cleaning of Oxide Areas Exposed During Copper CMP in Hydroxylamine Based SlurriesPost Copper CMP: a Two Steps Cleaning RecipeSilicon Surface Cleaning after Spacer Dry EtchingThe Effect of DI Water and Intermediate Rinse Solutions on Post Metal Etch Residue Removal Using Semi-Aqueous Cleaning ChemistriesWet Cleaning of Trenches and Vias after Oxide/Nitride Dry Etch with Cu Exposed
