Houssa / Dimoulas / Molle 2D Materials for Nanoelectronics

Erscheinungsjahr 2016
ISBN: 978-1-4987-0418-2
Verlag: CRC Press
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 483 Seiten

Reihe: Series in Materials Science and Engineering

Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.

Comprised of chapters authored by internationally recognised researchers, this book:

- Discusses the use of graphene for high-frequency analog circuits

- Explores logic and photonic applications of molybdenum disulfide (MoS2)

- Addresses novel 2D materials including silicene, germanene, stanene, and phosphorene

- Considers the use of 2D materials for both field-effect transistors (FETs) and logic circuits

- Provides background on the simulation of structural, electronic, and transport properties from first principles

2D Materials for Nanoelectronics presents extensive, state-of-the-art coverage of the fundamental and applied aspects of this exciting field.

Autoren/Hrsg.

Houssa, Michel

Dimoulas, Athanasios

Molle, Alessandro

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

GRAPHENE

Theory of the Structural, Electronic, and Transport Properties of Graphene
Massoud Ramezani Masir, Ortwin Leenaerts, Bart Partoens, and François M. Peeters

Epitaxial Graphene: Progress on Synthesis and Device Integration
Joshua Robinson, Matthew Hollander, and Suman Datta

Metal Contacts to Graphene
Akira Toriumi and Kosuke Nagashio

Graphene for RF Analogue Applications
Max C. Lemme and Frank Schwierz

High-Field and Thermal Transport in Graphene
Zuanyi Li, Vincent E. Dorgan, Andrey Y. Serov, and Eric Pop

TRANSITION METAL DICHALCOGENIDES

Theoretical Study of Transition Metal Dichalcogenides
Emilio Scalise

Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces
Stephen McDonnell, Rafik Addou, Christopher L. Hinkle, and Robert M. Wallace

Transition Metal Dichalcogenide Schottky Barrier Transistors: A Device Analysis and Material Comparison
Joerg Appenzeller, Feng Zhang, Saptarshi Das, and Joachim Knoch

TMD-Based Photodetectors, Light Emitters, and Photovoltaics
Thomas Mueller

Optoelectronics, Mechanical Properties, and Strain Engineering in MoS2
Andres Castellanos-Gomez, Michele Buscema, Herre S.J. van der Zant, and Gary A. Steele

Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors
Hsiao-Yu Chang, Weinan Zhu, and Deji Akinwande

NOVEL 2D MATERIALS

Structural, Electronic, and Transport Properties of Silicene and Germanene
Michel Houssa, Valery Afanas’ev, and André Stesmans

Group IV Semiconductor 2D Materials: The Case of Silicene and Germanene
Alessandro Molle, Dimitra Tsoutsou, and Athanasios Dimoulas

Stanene: A Likely 2D Topological Insulator
William Vandenberghe, Ana Suarez Negreira, and Massimo Fischetti

Phosphorene: A Novel 2D Material for Future Nanoelectronics and Optoelectronics
Yexin Deng, Z. Luo, Han Liu, Yuchen Du, X. Xu, and Peide D. Ye

2D Crystal-Based Heterostructures for Nanoelectronics
Cinzia Casiraghi and Freddie Withers

Über Autor(innen)

Michel Houssa earned his master’s and PhD in physics at the University of Liège, Belgium. He is presently a professor in the Department of Physics and Astronomy at the University of Leuven, Belgium. His current research focuses on the first principles modeling of various materials, including semiconductor/oxide interfaces and two-dimensional materials (silicene, germanene, and transition metal dichalcogenides), and their heterostructures. He has authored or co-authored nearly 350 publications, given about 50 invited talks and seminars, and been co-organiser of several international symposia and conferences. He is an Electrochemical Society fellow and an Institute of Electrical and Electronics Engineers senior member.

Athanasios Dimoulas earned his PhD in applied physics at the University of Crete, Greece. He is currently the research director and head of the Epitaxy and Surface Science Laboratory at the National Center for Scientific Research "Demokritos," Athens, Greece. He has coordinated several European-funded projects in advanced CMOS and received the European Research Council-funded SMARTGATE – "Smart Gates for the ‘Green’ Transistor" Advanced Investigator Grant 2011 – "IDEAS." Widely published, Dr. Dimoulas has about 40 invited talks and has been active with several symposia, conferences, and committees as an organizer and chair. He has held fellowships at the University of Groningen, Holland; California Institute of Technology, Pasadena, USA; and University of Maryland, College Park, USA; and been a visiting research scientist at IBM Zurich Research Laboratory, Switzerland.

Alessandro Molle earned his PhD in materials science at the University of Genoa, Italy. He is presently a research scientist and group leader of the research line on low-dimensional materials and devices in the MDM Laboratory at the Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Agrate Brianza, Italy. He is currently involved in the integration of silicene and other 2D elementary materials into transistors, and in the synthesis and structural characterisation of 2D materials beyond graphene. Widely published, he has been active with symposia, received many invitations to present at international conferences, and guest edited special issues of proceeding papers. He has been co-chairing a master’s course on surfaces and interfaces at the University of Milano-Bicocca, Italy.