Resistive Switching

From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
1. Auflage 2016
ISBN: 978-3-527-33417-9
Verlag: Wiley VCH Verlag GmbH

Buch, Englisch, 755 Seiten, Format (B × H): 174 mm x 251 mm, Gewicht: 1813 g

Dieses umfassende und wertvolle Referenzwerk führt die Leser in dieses breit gefächerte Fachgebiet ein, vermittelt das notwendige Wissen, Werkzeuge und Methoden, um Speicher mit resistiver Schaltung zu verstehen, zu charakterisieren und einzusetzen.

Autoren/Hrsg.

Ielmini, Daniele

Waser, Rainer

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

INTRODUCTION

 

TRANSITION METAL OXIDES

Atomic Structures of Selected Binary, Ternary Oxides

Deposition Techniques

Thermodynamics of Oxidation, Ellingham Diagram

Electronic Structure and Conduction

Correlated Electrons

Ionic Conduction

 

RESISTIVE SWITCHING

Device Structure

Unipolar Switching: Forming, Set/Reset Operations

Bipolar Switching: Forming, Set/Reset Operations

Coexistence of Unipolar/Bipolar Switching

Filamentary Switching and Atomic Force Microscopy Analysis

Interface Switching

Threshold and Memory Switching

Time Dependence of Set/Reset

Resistance Dependence of Set/Reset

 

SWITCHING MECHANISMS AND MODELS

Unipolar Switching: Set/Reset Mechanisms and Models

Bipolar Switching: Set/Reset Mechanisms and Models

Modeling of Resistance Dependence (Filament Size and Gap)

Modeling of Time Dependence

Modeling of Set Current Dependence

Overshoot and Parasitic Effects

Material Dependence and Universal Switching

 

MEMORY RELIABILITY

Read Disturb and The Time-Voltage Dilemma

Data Retention

1/f and Random Telegraph Signal Noise

Switching Variability and Set/Reset Algorithms

Reset Current Reduction

Set/Reset Instability

Cycling Endurance

 

MEMORY CELL STRUCTURES

MIM Structures

Bilayered Structures

Lighting-Rod Structures

Contact RRAM

Complementary Resistance Switch (CRS)

Multilevel Cells

Alternative Materials: OxRRAM, PoRRAM, CBRAM

Bottom-Up Approaches: Nanotubes, Nanowires and Self-Assembly

 

MEMORY ARCHITECTURES

Crossbar Array

Diode Selectors

Transistor Selectors

1T1R Architectures

CMOL

Scaling Issues (Series Resistance, Programming Cross Talk, 3D Stacking Issues)

 

LOGIC GATES

The Memristor

Crossbar Latch

Data Restoration

IMP Function

STDP in Memristor Gates

 

CONCLUSIONS

INTRODUCTION

TRANSITION METAL OXIDES
Atomic Structures of Selected Binary, Ternary Oxides
Deposition Techniques
Thermodynamics of Oxidation, Ellingham Diagram
Electronic Structure and Conduction
Correlated Electrons
Ionic Conduction

RESISTIVE SWITCHING
Device Structure
Unipolar Switching: Forming, Set/Reset Operations
Bipolar Switching: Forming, Set/Reset Operations
Coexistence of Unipolar/Bipolar Switching
Filamentary Switching and Atomic Force Microscopy Analysis
Interface Switching
Threshold and Memory Switching
Time Dependence of Set/Reset
Resistance Dependence of Set/Reset

SWITCHING MECHANISMS AND MODELS
Unipolar Switching: Set/Reset Mechanisms and Models
Bipolar Switching: Set/Reset Mechanisms and Models
Modeling of Resistance Dependence (Filament Size and Gap)
Modeling of Time Dependence
Modeling of Set Current Dependence
Overshoot and Parasitic Effects
Material Dependence and Universal Switching

MEMORY RELIABILITY
Read Disturb and The Time-Voltage Dilemma
Data Retention
1/f and Random Telegraph Signal Noise
Switching Variability and Set/Reset Algorithms
Reset Current Reduction
Set/Reset Instability
Cycling Endurance

MEMORY CELL STRUCTURES
MIM Structures
Bilayered Structures
Lighting-Rod Structures
Contact RRAM
Complementary Resistance Switch (CRS)
Multilevel Cells
Alternative Materials: OxRRAM, PoRRAM, CBRAM
Bottom-Up Approaches: Nanotubes, Nanowires and Self-Assembly

MEMORY ARCHITECTURES
Crossbar Array
Diode Selectors
Transistor Selectors
1T1R Architectures
CMOL
Scaling Issues (Series Resistance, Programming Cross Talk, 3D Stacking Issues)

LOGIC GATES
The Memristor
Crossbar Latch
Data Restoration
IMP Function
STDP in Memristor Gates

CONCLUSIONS

Über Autor(innen)

Daniele Ielmini is associate professor in the Department of Electrical Engineering, Information Science and Bioengineering, Politecnico di Milano, Italy. He obtained his Ph.D. in Nuclear Engineering from Politecnico di Milano in 2000. He held visiting positions at Intel and Stanford University in 2006. His research group investigates emerging device technologies, such as phase change memory (PCM) and resistive switching memory (ReRAM) for both memory and computing applications. He has authored six book chapters, more than 200 papers published in international journals and presented at international conferences, and four patents to his name. Professor Ielmini received the Intel Outstanding Research Award in 2013 and the ERC Consolidator Grant in 2014.

Rainer Waser is professor at the faculty for Electrical Engineering and Information Technology at the RWTH Aachen University and director at the Peter Grünberg Institute at the Forschungszentrum Jülich (FZJ), Germany. His research group is focused on fundamental aspects of electronic materials and on such integrated devices as nonvolatile memories, logic devices, sensors and actuators.
Professor Waser has published about 500 technical papers. Since 2003, he has been the coordinator of the research program on nanoelectronic systems within the Germany national research centres in the Helmholtz Association. In 2007, he has been co-founder of the Jülich-Aachen Research Alliance, section Fundamentals of Future Information Technology (JARA-FIT). In 2014, he was awarded the Gottfried Wilhelm Leibniz Prize of the Deutsche Forschungsgemeinschaft and the Tsungming Tu Award of the Ministry of Science and Technology of Taiwan.