Buch, Englisch, 516 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1100 g
ISBN: 978-3-03785-232-3
Verlag: Trans Tech Publications
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface and Committees
Plenary
Intrinsic Point Defects in Silicon Crystal Growth
Chapter 1: Silicon-Based and Advanced Semiconductor Materials
Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology
Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si
Electron Mobility in Moderately Doped Si1-xGex
Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
Chapter 2: Nanocrystals, Nanowires, Quantum Dots
Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon
Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy
Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells
Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering
Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study
C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon
Chapter 3: Crystalline Silicon for Solar Cells
Silicon PV Wafers: Mechanical Strength and Correlations with Defects and Stress
Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon
Coefficient of Diffusion in Crystals of Si1-xGex: Role of Preexponential Factor
Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy
Recombination Activity of Twin Boundaries in Silicon Ribbons
Fast Light-Induced Solid Phase Crystallization of Nanometer Thick Silicon Layers on Quartz
Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL
Chapter 4: Co-Integration of Si and Ge, III-V, Graphenes, Organo-Silica Devices
Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel
Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.
Chapter 5: Point Defects in Si
The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon
IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si
Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon
Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties
Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin
1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal
Boron-Oxygen-Related Defect in Silicon
Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon
Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation
Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon
Chapter 6: Extended Defects
Microdefects in Heavily Phosphorus-Doped Czochralski Silicon
Recombination at Oxide Precipitates in Silicon
Iron Gettering at Slip Dislocations in Czochralski Silicon
Formation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal Annealing
Effects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline Silicon
XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source
Chapter 7: Defects and Interfaces
Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface
Analysis of Contaminated Oxide-Silicon Interfaces
Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films
Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers
Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties
Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties
Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements
Chapter 8: Defect and Impurity Characterization
Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon
Spectroscopic Studies of Iron and Chromium in Germanium
New Results on the Bound Exciton Luminescence in Germanium
Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications
Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon
TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon
Oxygen Precipitation Studied by X-Ray Diffraction Techniques
Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements
Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions
Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction
Structural Defect Studies of Semiconductor Crystals with Laue Topography
Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS
Chapter 9: Gettering, Passivation and Defect Engineering
Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles
Polycrystalline Silicon Layers with Enhanced Thermal Stability
Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals
Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium
Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity
Tailoring the Electrical Properties of Undoped GaP
Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure
Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon
Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge
Chapter 10: Advanced Solar Cells
Studying Light Soaking of Solar Cells by the Use of Solar Simulator
Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System
Light Trapping in Monocrystalline Si Solar Cells Using Back–Side Diffraction Gratings
Chapter 11: Silicon-Based Photonics
Visible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and Properties
Defect Engineering in 2D Photonic Crystals Fabricated by Electrochemical Etching of Silicon
Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix
Chapter 12: Modeling and Simulation
Bistable Defects as the Cause for NBTI and RTN
The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process
Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory
Homogeneous and Heterogeneous Nucleation of Oxygen in Si-CZ
Application of Double Crucible in Cz Si Crystal Growth
Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot
