Sonstiges, Englisch, 516 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 516 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03795-057-9
Verlag: Trans Tech Publications
The papers contained herein cover the most important and timely issues in the field of ?Gettering and Defect Engineering in Semiconductor Technology?, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
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Intrinsic Point Defects in Silicon Crystal GrowthStimulated Creation of the SOI Structures with Si Nano-Clustersw by Low?Dose SIMOX TechnologyRoom Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on SiElectron Mobility in Moderately Doped Si1-xGexImpact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single CrystalsCharacterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured SiliconAcceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance MicroscopyTime-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic CellsSynthesis of Light Emitting Ge Nanocrystals by Reactive RF SputteringElectrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS StudyC-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type SiliconSilicon PV Wafers: Mechanical Strength and Correlations with Defects and StressClassification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) SiliconCoefficient of Diffusion in Crystals of Si1-xGex: Role of Preexponential FactorCharacterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient SpectroscopyRecombination Activity of Twin Boundaries in Silicon RibbonsFast Light-Induced Solid Phase Crystallization of Nanometer Thick Silicon Layers on QuartzAnalysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PLSurface Corrugation and Stacking Misorientation in Multilayers of Graphene on NickelElectronic Properties of ZnO/Si Heterojunction Prepared by ALD.The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type SiliconIR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-SiFormation of Copper-Related Deep-Level Centers in Irradiated P-Type SiliconTowards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material PropertiesPeculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon CrystalBoron-Oxygen-Related Defect in SiliconHydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type SiliconEvolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and SimulationHydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted SiliconMicrodefects in Heavily Phosphorus-Doped Czochralski SiliconRecombination at Oxide Precipitates in SiliconIron Gettering at Slip Dislocations in Czochralski SiliconFormation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal AnnealingEffects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline SiliconXBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray SourceDislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer InterfaceAnalysis of Contaminated Oxide-Silicon InterfacesNitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride FilmsMechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded WafersStress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface PropertiesInteraction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface PropertiesAccurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping MeasurementsTransmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline SiliconSpectroscopic Studies of Iron and Chromium in GermaniumNew Results on the Bound Exciton Luminescence in GermaniumInvestigation of Germanium Implanted with Hydrogen for Layer Transfer ApplicationsScanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline SiliconTEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline SiliconPositron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single CrystalsDefect Investigations via Positron Annihilation Spectroscopy on Proton Implanted SiliconOxygen Precipitation Studied by X-Ray Diffraction TechniquesInvestigation of Defects in Solar Cells and Wafers by Means of Magnetic MeasurementsLuminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication ConditionsCarrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal DiffractionStructural Defect Studies of Semiconductor Crystals with Laue TopographyDeep Level Defects in 4H-SiC Schottky Diodes Examined by DLTSConversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor ProfilesPolycrystalline Silicon Layers with Enhanced Thermal StabilityRadiation-Induced Defect Reactions in Tin-Doped Ge CrystalsHydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and DeuteriumAccumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation IntensityTailoring the Electrical Properties of Undoped GaPSolid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic PressureLow-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in SiliconAnalysis of Auger Recombination Characteristics in High Resistivity Si and GeStudying Light Soaking of Solar Cells by the Use of Solar SimulatorImplementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping SystemLight Trapping in Monocrystalline Si Solar Cells Using Back?Side Diffraction GratingsVisible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and PropertiesDefect Engineering in 2D Photonic Crystals Fabricated by Electrochemical Etching of SiliconPhotocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide MatrixBistable Defects as the Cause for NBTI and RTNThe Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation ProcessReconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice TheoryHomogeneous and Heterogeneous Nucleation of Oxygen in Si-CZApplication of Double Crucible in Cz Si Crystal GrowthModeling of Lifetime Distribution in a Multicrystalline Silicon Ingot
