Solid State Imaging

1976. Auflage 1976
ISBN: 978-90-286-0046-1
Verlag: Springer

Buch, Englisch, Band 16, 745 Seiten, Gewicht: 1330 g

Reihe: NATO Science Series E:

An Advanced Study Institute on solid-state imaging was held in Louvain-la-Neuve, Belgium on September 3-12, 1975 under the auspices of the Scientific Affairs Division of NATO. The Institute was organized by a scientific organizing committee consisting of Professor Paul Jespers and Professor Fernand Van de Wiele of the Universite' Catholique de Louvain and Dr. Marvin H. White of the Westinghouse Electric Corporation. This book represents the con­ tributions of the lecturers at the Institute and the chapters pre­ sert, for the first time, a concise treatment of a very timely subject, namely, solid-state imaging. The organization of the book parallels the program at the Institute with an introduction r. omprised of historical development and applications. This is f0~lowed by the physics of photosensors which leads quite naturally into the various solid-state photosensor arrays. The subject of signal extraction, which is often an overlooked area, follows and the last part of the book is devoted to the various system's con­ siderations. The subject matter of this book is suitable for a Wide range of interests from the advanced·student, through the practicing physcist and engineer, to the research worker. Although a novice may find some difficulty with the mathematical development, he can acquire a perspective into the field of solid-state imaging with this book. Likewise, portions of this book may be used as a text­ book since ~he chapters are instructional and self-contained.

Zielgruppe

Research

Autoren/Hrsg.

Jespers, P.

de Wiele, F van

White, M H

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren

Inhaltsverzeichnis

Section I: Introduction.- History of Solid-State Imaging.- Solid-State Imaging Applications.- Section II: Physics of Photosensors.- Anti-reflection Films and Multilayer Structures.- Photodiode Quantum Efficiency.- Bulk Trapping.- Surface Trapping.- Section III: Diode and Transistor Arrays.- Charge Storage Operation of Silicon Photodetectors.- XY Addressing.- Photodiode Sensor Arrays.- Phototransistor Arrays.- Section IV: CTD Arrays.- Charge Integration and Storage in MOS Photosensors.- to Charge-Coupled Devices.- Organization of Charge-Coupled Image Sensors.- Charge Transport without Traps.- Charge Transport with Traps.- Image Sensors Using Surface Channel Charge-Coupled Devices.- Buried Channel CCD’s.- Peristaltic Charge-Coupled Devices.- Electrical Charge Injection into CCD’s.- Section V: CID Arrays.- Charge-Injection Devices for Solid State Imaging.- Three-Terminal Charge-Injection Device.- Section VI: Signal Extraction.- Design of Solid-State Imaging Arrays.- Interlacing in Solid-State Image Sensors.- Amplifier and Amplifier Noise Considerations.- Principles of Low-Noise Signal Extraction from Photodiode Arrays.- Distributed Floating Gate Amplifier.- Fixed Pattern Noise and Cooled Photosensor Arrays.- Section VII: Systems.- Aliasing and MTF Effects in Photosensor Arrays.- Signal and Noise in the Display of Images.- Time Delay and Integration Image Sensors.- Solid State Infrared Imaging.- Low Light Level Performance of Charge-Coupled Area Imaging Devices.- Comparison of Solid-State Imagers and Electron Beam Scanning Imagers.- List of Participants.