Linearization and Efficiency Enhancement Techniques for Silicon Power Amplifiers

From RF to mmW
Erscheinungsjahr 2015
ISBN: 978-0-12-418678-1
Verlag: William Andrew Publishing

Buch, Englisch, 162 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 250 g

This book provides an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. Coverage includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations.

With this book you will learn:

- The principles of linearization and efficiency improvement techniques
- The architectures allowing the optimum design of multimode Si RF and mmW power amplifiers
- How to make designs more efficient by employing new design techniques such as linearization and efficiency improvement
- Layout considerations
- Examples of schematic, layout, simulation and measurement results

Zielgruppe

Researchers and graduate students; engineers and project managers.

Autoren/Hrsg.

Kerhervé, Eric

Belot, Didier

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik Funktechnik

Inhaltsverzeichnis

Chapter 1: Holistic Approaches for Power Generation, Linearization, and Radiation in CMOS, A. Hajimiri Chapter 2: Cartesian Feedback with digital enhancement for CMOS RF transmitter, Nathalie Deltimple Chapter 3: Transmitter Linearity and Energy Efficiency, Earl. Mc Cune Chapter 4: mmW Doherty, F. Ghannouchi Chapter 5: Reliable Power Amplifier, B. Martineau Chapter 6: Efficiency Enhancement for THz Power Amplifier, U. Pfeiffer

Über Autor(innen)

Kerhervé, Eric
Eric Kerhervé received the Ph.D. degree in Electrical Engineering from University of Bordeaux, France in 1994. He joined the Polytechnic Institute of Bordeaux and the IMS Laboratory in 1996, where he is currently Full Professor in Microelectronics and Microwave applications.
He has been the head of Microwave Circuits and Systems team at IMS since 1998. His main areas of research are the design of RF, microwave and millimeter-wave circuits (power amplifiers and filters) in silicon GaAs and GaN technologies.
He is involved in several European projects (Medea+ UPPERMOST, Medea+ QSTREAM, Catrene PANAMA, FP6 MOBILIS, ENIAC MIRANDELA), to develop silicon RF/mmW power amplifiers and BAW duplexer.
Eric has authored and co-authored more than 200 technical papers in this field, and has been awarded 24 patents. He has organized 8 RFIC and EuMC workshops on advanced silicon technologies for radiofrequency and millimeter-wave applications, and he is involved in the technical program committees of various international conferences (ICECS, IMOC, NEWCAS, EuMIC, SBCCI, LASCAS) and he was the co-chair of the international IEEE ICECS' 2006 and IEEE NEWCAS' 2011 conferences. He was the associate editor of IEEE Transactions on Circuits and Systems II (TCAS II) for two years and is a senior member of the IEEE and a member of the IEEE-CAS, IEEE-MTT and IEEE SSCS societies, and has been involved in the NPTO (Navigation Positioning Telecom and Observation) Strategic Business Sectors within the "Aerospace Valley" World Competitiveness Cluster since 2010.