Sonstiges, Englisch, 550 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 550 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-998-2
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
Charge Collection Scanning Microscopy: Non-Conventional ApplicationsEBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs HeterostructuresEBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron ConfinementLaser Induced Mapping for Separation of Bulk and Surface RecombinationAnalysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark CurrentDetection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI WafersCharacterization of Laser Structures by EBIC Measurements and SimulationEvaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBICMonte Carlo Simulation of the Recombination Contrast of DislocationsEBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski SiliconImpact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection TechniquesLBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar SiliconDetermination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar ConfigurationSEM-EBIC Study of Defects in Epitaxial AlGaN LayersMinority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy StudyIon Beam Induced LuminescenceNanocharacterization of Semiconductors by Scanning Photoluminescence MicroscopyCathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection EfficiencyCathodoluminescence Study on ZnO and GaNCathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium ArsenideCathodoluminescence from Nanocrystalline Silicon Films in the Scanning Electron MicroscopeThe Spatial Distribution of Modulated CL Signal in Inhomogeneous Semiconductors with Large Diffusion LengthEffect of Plastic Deformation on the Luminescence of ZnSe CrystalsEffect of Erbidum on the Luminescence Properties of GaSb CrystalsDirect Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved CathodoluminescenceCathodoluminescence and Photoluminescence Characterisation of Etched Mesas of ZnTe/ZnMgTe Quantum Wells under Tensile StrainCathodoluminescence Study of Defect Distribution at Different Depths in Films SiO2/SiCathodoluminescence Dependence on Beam Generation Conditions and Surface Properties of MaterialsNeat Field Optics: Comeback of Light in MicroscopyNear-Field Cathodoluminescence (NF-CL) Investigations on Semiconducting MaterialsLocal Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on SiliconCorrelative SEM/STM Study of Local Electronic Properties in Compound SemiconductorsObservation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)The Sloc Positron Beam Technique ? A Unique Tool for the Study of Vacancy-Type Defects in SemiconductorsMinority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in SiliconGrain Growth of ZnSe Recrystallized in the Solid PhaseLateral Doping Inhomogeneities as Revealed by ?-NEXAFS and ?-PESApplication of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor StructuresModification of Electronical and Optical Properties in SiO2 Films by Electron Beam IrradiationFabrication and Ellipsometric Investigation of Thin Films of Rare-Earth OxidesNon-Destructive Investigations of Co and CoSi2-x Films on Si SubstrateCharacterization of Laser-Irradiated CdxHg1-xTe Solid Solutions by Scanning Microscopy MethodScanning Acoustic Microscopes for the Investigation of Ferroelectric Properties of MaterialsThe Nature of the Electronic States of Cu3Si-Precipitates in SiliconTEM and Photoluminescence Investigations of InGaAs/GaAs Quantum Well LayersThe Assessment of Micro-Analytical Techniques to the Semiconductor Manufacturing EnvironmentGate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current BreakdownDefect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current TechniqueAnalysis of Non-Uniform Contamination Profiles by Lifetime DataScanning Photoluminescence for Wafer CharacterizationFailure Mode Analysis of a 0.25 ?m CMOS Technology by Scanning Electron and Ion BeamsFailure Analysis of Neutron-Irradiated MQW InGaAsP/InP Lasers by EBICInline Analysis of Defects in Microelectronic Fabrication by Optical and Scanning Electron Microscopical TechniquesApplication of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor StructuresCorrelation of Cathodoluminescence and EBIC Contrast in GaAs/AlxGa1-xAs Quantum Well StructuresEBIC and Cathodoluminescence Study of the Bonded Silicon WafersSpatially Resolved Cathodoluminescence Study on CVD Homoepitaxial Diamond FilmCathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n+-p InP/Si Solar CellsElectrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical MethodsStress Measurements in sub-?m Si Structures Using Raman SpectroscopyTwo Dimensional Mapping of pn Junctions by Electron HolographyThe Future of Beam Injection Techniques: Summary of the Round-Table Discussion Held at BIADS 98
