Buch, Englisch, 610 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1200 g
ISBN: 978-3-908451-74-7
Verlag: Trans Tech Publications
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface
Committeess
I. Multi-Crystalline Silicon for Solar Cells
Influence of Defects on Solar Cell Characteristics
Dislocation Engineering in Multicrystalline Silicon
Grain Boundaries in Multicrystalline Si
Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon
Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells
Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon
Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon
An Investigation into Fracture of Multi-Crystalline Silicon
II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC
Strained Silicon Devices
Novel Trends in SOI Technology for CMOS Applications
Advanced Si-based Semiconductors for Energy and Photonic Applications
Si Wafer Bonding: Structural Features of the Interface
Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
Growth of Heavily Phosphorus-Doped (111) Silicon Crystals
Semi-Insulating Silicon for Microwave Devices
III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe
Can Impurities be Beneficial to Photovoltaics?
Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors
The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures
Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
Vacancies and Self-Interstitials Dynamics in Silicon Wafers
Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface
Anomalous Out-Diffusion Profiles of Nitrogen in Silicon
DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing
Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms
Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers
Oxygen Diffusion in Si1-xGex Alloys
The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon
IV. Modeling and Simulation of Growth, Gettering and Characterization
Numerical Analysis of mc-Si Crystal Growth
Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates
Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects
Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon
Thermal Optimization of Cz Silicon Single Crystal Growth
Simulation of Iron Distribution after Crystallization of mc Silicon
Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study
Effect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo Simulation
Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors
Simulation of XBIC Contrast of Precipitates in Si
V. Defect Aspects and Defect Engineering
Dislocation Nucleation in Heteroepitaxial Semiconducting Films
Impurity Engineering of Czochralski Silicon
The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage
Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening
Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers
Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers
Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium
Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals
Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures
Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene
Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon
Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O
Influence of Hydrogen on the Structural Stability of Annealed Ultrathin Si/Ge Amorphous Layers
Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
Suppression of Pores Formation on a Surface of p-Si by Laser Radiation
VI. Gettering and Hydrogen Passivation
Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application
Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon
Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers
Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques
Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates
Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
Iron Gettering i
