Gettering and Defect Engineering in Semiconductor Technology XIII

Erscheinungsjahr 2010
ISBN: 978-3-908454-70-0
Verlag: Trans Tech Publications

Sonstiges, Englisch, 610 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Autoren/Hrsg.

Kittler, Martin

Richter, H.

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Influence of Defects on Solar Cell CharacteristicsDislocation Engineering in Multicrystalline SiliconGrain Boundaries in Multicrystalline SiAnalysis of Heterogeneous Iron Precipitation in Multicrystalline SiliconGrowth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar CellsAnalysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline SiliconInvestigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline SiliconStrained Silicon DevicesNovel Trends in SOI Technology for CMOS ApplicationsAdvanced Si-based Semiconductors for Energy and Photonic ApplicationsSi Wafer Bonding: Structural Features of the InterfaceBuried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and AnnealingGrowth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave DevicesCan Impurities be Beneficial to Photovoltaics?Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal DonorsThe Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High PressuresDivacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode StudiesLow-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon WafersInteraction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the InterfaceAnomalous Out-Diffusion Profiles of Nitrogen in SiliconDLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step AnnealingRadiation Defects in Silicon: Effect of Contamination by Platinum AtomsReview of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex AlloysThe Effect of Germanium Doping on the Production of Carbon?Related Defects in Electron-Irradiated Czochralski SiliconNumerical Analysis of mc-Si Crystal GrowthMolecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation SubstratesOptimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal DefectsRate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ SiliconThermal Optimization of Cz Silicon Single Crystal GrowthSimulation of Iron Distribution after Crystallization of mc SiliconComparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation studyEffect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo SimulationVersatile Simulation Tool and Novel Measurement Method for Electrical Characterization of SemiconductorsSimulation of XBIC Contrast of Precipitates in SiDislocation Nucleation in Heteroepitaxial Semiconducting FilmsImpurity Engineering of Czochralski SiliconThe Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation DamageOxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald RipeningStudy of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si WafersElectronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon WafersDislocation States and Deformation-Induced Point Defects in Plastically Deformed GermaniumDefect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe CrystalsFormation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated TemperaturesRole of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of GrapheneBoron and Phosphorus Implantation Induced Electrically Active Defects in p-Type SiliconAccumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:OInfluence of Hydrogen on the Structural Stability of Annealed Ultrathin Si/Ge Amorphous LayersDemonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier DiodesSuppression of Pores Formation on a Surface of p-Si by Laser RadiationHydrogenation in Crystalline Silicon Materials for Photovoltaic ApplicationHydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline SiliconBulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H LayersPassivation of Si Surfaces Investigated by In Situ Photoluminescence TechniquesGettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation SubstratesTrans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped SiliconIron Gettering in CZ Silicon during the Industrial Solar Cell ProcessStudy of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell FabricationEffect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown SiliconFar-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by BiQuantitative Iron Concentration ImagingEBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and EpitaxyCharacterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman SpectroscopyComparative Study of Electrical and Optical Properties of Plastically Deformed SiliconSpatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements
In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-RaysDelineation of Microdefects in Silicon Substrates by Chromium-Free Preferential Etching Solutions and Laser Scattering TomographyAn Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar SiliconPoint Defects in ?-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-ConversionElectron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETsCharacterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer LayersSEM Characterization of Silicon Layers Grown on Carbon FoilInvestigation of the Mechanical Properties of Thin Films by Bulge TestDefect Characterization of Poly-Ge and VFG-Grown Ge MaterialCathodoluminescence of SiO2/Si SystemCorrelation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiCCurrent Status of Graphene TransistorsTheoretical Study of Ionized Impurities in Silicon Nanowire MOS TransistorsScaling in Quantum Transport in Silicon Nano-TransistorsAnisotropic Strain ? Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2Silicon Cluster Aggregation in Silica LayersFeedback Effect on the Self-Organized Nanostructures Formation on Silicon upon Femtosecond Laser AblationConfinement Levels in Passivated SiGe/Si Quantum Well StructuresSilicon Periodic Structures and their Liquid Crystal CompositesDependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle.D-Line Emission from Small Angle Grain Boundaries in Multicrystalline SiDetermination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation NetworksStructural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related LuminescenceOptimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing