Sonstiges, Englisch, Band Volume 65, 252 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Key Engineering Materials
Sonstiges, Englisch, Band Volume 65, 252 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Key Engineering Materials
ISBN: 978-3-03859-650-9
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
Optical Investigation of Novel PbTe p-i-n-i-p StructuresOptical Control of Electrical and Structural Thin Film PrpertiesOptical Indentification of PbO Films Crystal ModificationOptical Spectroscopy of GaAs Layers Grown by MOVPEOptical Properties of Amorphous and Microcrystalline Si-Ge Thin FilmsThe Influece of High-Temperature Annealing on the Transient Optical and Structure Properties of Semi-Insulating GaAsRadiative and Nonradiative Recombination Processes in Ion Implanted Semi-Insulating GaAsEL2 Intracenter Transition in Photoconductivity Spectra of Semi-Insulating GaAs:CrIR Reflection from Semiconductor Multilayered Structures with the Composition Gradient LayersThe Energy Gaps in SiXGe1-X AlloysOptical Characterization of Monolayer Islands and Interface Effects in InGaAs/InP Multiquantum Well StructuresPhotoluminescence Probing the Si Incorporation in MBE Grown AlXGa1-XAsAssociates of Charged Defects in Gallium Arsenide: Calculation and Photoluminescence DataPhotoluminescence of Bismuth Doped GaSbOptical Effects in Thin LayersMagnetooptical Spectroscopy of Layer Dilute Magnetic SemiconductorsVisible Light Characterization of Sillicon on Insulator MaterialsPhotoluminescence Study of Transition Metal-Shallow Impurity Complexes in SemiconductorsThe Origin of the M-Centre in Zinc SelenideQuantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAsLattice Relaxation Effect on Bound Exciton in Ga1-XInXP:NOptical Absorption Cross-Section of Sb in GePhotoluminescence Evaluation of n-Type GaAs LPTT Layers Grown from a Bi-SolutionPhotoreflectance Characterization of the Internal Electric Fields across the N-Type GaAs/Al0.3Ga0.7As Heterojunctions in MBE Grown MaterialComparison of Far Infrared and Raman Spectroscopy for Studying Phonon Confinement in SuperlatticesFar Infrared Attenuatted Total Reflection Spectroscopy for Studying Superlattice StructuresOptical Characterization of A3-B5 Semiconductors, Heterstructures and Quantum Wells by PhotoreflectanceFIR Spectroscopy of PbTe Films on KCI SubstratesHot LO-Phonon Population in A3-B5 and A2-B6 Semiconductors and in AlGaAs-GaAs Quantum WellsLight Selfdiffraction Spectra in CdSe at 4.2 KEllipsometric Diagnostics of the GaAs-Oxide StructureAnisotropic Excitons in a Magnetic Field
