Buch, Englisch, 380 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1310 g
Buch, Englisch, 380 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1310 g
ISBN: 978-0-444-20502-5
Verlag: Elsevier Science & Technology
The aim of the Symposium was to discussthe most recent results in all fields of Group IVheterostructures and devices from fundamental physics toindustrial applications. Regular and invited contributions werethen welcomed which addressed the different aspects of growth,the effects of strain relaxation, particularly in SiGeC alloys,the basic optical and electrical properties of heterostructuresand low-dimensional structures, the microelectronic andoptoelectronics, such as rare-earth doping techniques, was alsoselected. Except for minor changes, the order of papers presentedin this special issue of Thin Solid Films closely follows theorder of topics listed above as well as the order of sessions atthe Symposium.
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The book is divided in seven sections, I: SiGe Growth andProcessing, Strain Relaxation and Related Characterization.II: Carbon Incorporation, SiGe(C)Alloys and Heterostructures.III: Electrical and Optical Properties of SiGe(C)Alloys andHeterostructures. IV: Er-Doped Silicon, Si/SiO2Heterostructures, Si Nanoparticles in SiO2 inSiO2 and Porous SiGe. V: Electrical Devices.VI: SiGe/Si Quantum Dots and Wires. VII: Luminescence andOptical Devices. Detailed contents are available by contactingthe Publisher.