Buch, Englisch, 89 Seiten, Paperback, Format (B × H): 190 mm x 235 mm
Reihe: Synthesis Lectures on Emerging Engineering Technologies
Buch, Englisch, 89 Seiten, Paperback, Format (B × H): 190 mm x 235 mm
Reihe: Synthesis Lectures on Emerging Engineering Technologies
ISBN: 978-1-68173-385-2
Verlag: MORGAN & CLAYPOOL
Autoren/Hrsg.
Weitere Infos & Material
- Preface
- Acknowledgments
- Introduction
- Historical Perspectives of Scaled MOSFET Evolution
- Simulation Results of On-State Drain Current and Subthreshold Drain Current at Substrate Temperatures Below 300 K
- Simulation Results on Substrate Mobility and On-Channel Mobility of Conventional Long-Channel $n$-MOSFET at Substrate Temperatures 300 K and below
- Simulation Outcomes of Subthreshold Slope Factor or Coefficient for Different Substrate Temperatures at the Vicinity of a Subthreshold Region to Deep Subthreshold Region of a Long-Channel $n$-MOSFET
- Review of Scaled Device Architectures for Their Feasibility To Low-Temperature Operation Simulation Perspectives of the Author's Current Research
- Summary of Research Results and Conclusions
- References
- Author's Biography