Materials for Electronics: Silicon Carbide and Related Materials

Erscheinungsjahr 2020
ISBN: 978-3-0357-1642-9
Verlag: Trans Tech Publications

Buch, Englisch, 184 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 450 g

These papers were selected from materials of the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China. The collection introduces results of scientific and engineering researches in the area of growth, analysis of structure, and properties of wide bandgap semiconductors and of wide bandgap semiconductor devices.

Autoren/Hrsg.

Lu, Min

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

Preface
Chapter 1: Growth, Structure and Properties of Wide Bandgap Semiconductors
Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor
Synthesis of Diamond on SiC by Microwave Plasma Chemical Vapor Deposition: Comparison of Silicon-Face and Carbon-Face
High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth
Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition
Investigation of Solution-Processed Ga2O3 Thin Films and their Application in Dielectric Materials
The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes
Study on the Synthesis of SiC Powder Material by Using Induction Heating System
Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE
Chapter 2: Fabrication, Properties and Application of Wide Bandgap Semiconductor Devices
Characteristics and Drive Design Analysis of SiC
SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window
Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model
Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate
Normally-Off GaN Power Device Based on Stack AlGaN Barrier Structure and P-Type NiO Gate Electrode
Design and Fabrication of 4H-Sic Mosfets with Optimized JFET and p-Body Design
The Effect on the Interface and Reliability of SiC MOS by Ar/O2 Annealing
A Study of the High-K Enhanced Depletion-JTE for Ultra-High Voltage SiC Power Device with Improved JTE-Dose Window
Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier
Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes
Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes
Broadband Ultraviolet Photodetector Based on Graphene/ß-Ga2O3/GaN Heterojunction
Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing
Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes
Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT
Optimal Design of Large Signal Performance of AlN/GaN Hetero-Structural IMPATT and MITATT Diodes
Research of 3.3kV, 60A H-Bridge High-Voltage SiC Diode Modules