Semiconductors: Silicon Carbide and Related Materials

Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018)
Erscheinungsjahr 2019
ISBN: 978-3-0357-1385-5
Verlag: Trans Tech Publications

Buch, Englisch, 226 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 520 g

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.

Autoren/Hrsg.

Lu, Min

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Preface
Chapter 1: Growth, Structure and Property of Wide Bandgap Semiconductors
Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals
Investigation of the 6-Folded Pattern in the Facetted Region of 4° Off-Axis 4H-SiC
Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates
Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene
Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon
Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample
Study of the Growth Temperature Measurement and Control for Silicon Carbide Sublimation
Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition
Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers
Chapter 2: Fabrication, Property and Application of Wide Bandgap Semiconductor Devices
Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
Recent Progress of SiC MOSFET Devices
Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions
Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices
Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2
GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission
Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement
Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS
The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET
An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge
An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions
Simplified Silicon Carbide MOSFET Model Based on Neural Network
The Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFET
Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures
Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes
Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles
Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance
Thermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer

Über Autor(innen)

Ed. Min Lu