Semiconductors: Silicon Carbide and Related Materials

Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018)
Erscheinungsjahr 2019
ISBN: 978-3-0357-2385-4
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volume 954, 226 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Materials Science Forum

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.

Autoren/Hrsg.

Lu, Min

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Effect of Growth Chamber Structure on the Growth of Aluminum Nitride CrystalsInvestigation of the 6-Folded Pattern in the Facetted Region of 4? Off-Axis 4H-SiCEffects of Annealing Parameters on Epitaxial Graphene on SiC SubstratesInfluence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial GrapheneTheoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial LayersHomoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC SubstratesProgress in Single Crystal Growth of Wide Bandgap Semiconductor SiCStudy on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport SystemElectron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin RibbonMeasurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the SampleStudy of the Growth Temperature Measurement and Control for Silicon Carbide SublimationPhase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor DepositionMicrostructure of Interfacial Basal Plane Dislocations in 4H-SiC EpilayersDesign, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN RectifiersRecent Progress of SiC MOSFET DevicesImproved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal OxidationThe Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing ConditionsReliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-AnnealingLow Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS DevicesEffect of Grinding-Induced Stress on Interface State Density of SiC/SiO2GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power TransmissionResearch on Threshold Voltage Instability in SiC MOSFET Devices with Precision MeasurementSimulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBSThe Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFETAn Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate ChargeAn Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating RegionsSimplified Silicon Carbide MOSFET Model Based on Neural NetworkThe Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFETEffect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype StructuresSimulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT DiodesResearch on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail VehiclesComparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal PerformanceThermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer

Über Autor(innen)

Ed. Min Lu