TSV 3D RF Integration

High Resistivity Si Interposer Technology
Erscheinungsjahr 2022
ISBN: 978-0-323-99602-0
Verlag: William Andrew Publishing

Buch, Englisch, 292 Seiten, Format (B × H): 191 mm x 235 mm, Gewicht: 630 g

TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters.

A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.

Zielgruppe

<p>Engineers in microelectronics such as advanced package technology for 5G RF modules; graduate students working on microelectronics.</p>

Autoren/Hrsg.

Ma, Shenglin

Jin, Yufeng

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

1. Introduction to HR-Si Interposer Technology 2. Design, process and electrical verification of HR-Si interposer 3. Design, verification and optimization of novel vertical RF transmission structure in HR-Si interposer 4. HR-Si TSV integrated inductor 5. Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer 6. 3D heterogeneous RF integration oriented HR-Si interposer embedded with microchannel 7. Patch Antenna in Stacked HR-Si interposers 8. Through Glass Via Technology 9. Conclusion and outlook

Über Autor(innen)

Ma, Shenglin
Shenglin Ma is Associate Professor in the Department of Mechanical and Electrical Engineering at Xiamen University, China. He received his PhD from Peking University and has also been a guest researcher with the National Key Laboratory of Science and Technology in Micro/Nano Fabrication at Peking University. He has over 50 publications and 20 patents to his name, and his research focuses on TSV based 3D integration technology, MEMS and its applications.

Jin, Yufeng
YuFeng Jin is a Professor at Peking University, China. He also directed the National Key Laboratory of Science and Technology on Micro/Nano Fabrication for a number of years. He received his PhD from Southeast University, China. He has written three books on advanced packing technologies, and his research focus includes MEMS sensors and TSV related 3D integration of microsystems.