Mertens / Meuris / Heyns | Ultra Clean Processing of Semiconductor Surfaces XI | Buch | 978-3-03785-527-0 | sack.de

Buch, Englisch, 350 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

Mertens / Meuris / Heyns

Ultra Clean Processing of Semiconductor Surfaces XI

Buch, Englisch, 350 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 800 g

ISBN: 978-3-03785-527-0
Verlag: Trans Tech Publications


Volume is indexed by Thomson Reuters CPCI-S (WoS).This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also treat the surface chemistry of silicon and other semiconductors, cleaning related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning following CMP (chemical mechanical polishing).
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Weitere Infos & Material


Preface, Committees and Acknowledgements
Keynote
Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors
Chapter 1: Cleaning for FEOL Applications
Cleaning Technology for Advanced Devices beyond 20 nm Node
Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue
Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals
Development of a Integrated Dry/Wet Hybrid Cleaning System
New Chemical Vapor Delivery Systems for Surface Cleaning
Removal of UV Cured Resin Using Hybrid Cleaning Method
Chapter 2: Wet Etching
Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process
Wet Etching Behavior of Poly-Si in TMAH Solution
Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor
Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent
SiO2 Etch Rate Modification by Ion Implantation
Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch
Chapter 3: Surface Chemistry and Functionalisation
Chemical Control of Surfaces: From Fundamental Understanding to Practical Application
Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance
A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor
Clean Process Mechanism of HKMG during N-PMOS Patterning
Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers)
Evaluation of CD Fluctuation on QC Monitor

In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition
ALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry
Cleaning of III-V Materials: Surface Chemistry Considerations
Chapter 4: Cleaning for BEOL and 3D Applications
Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features
The Risk of Pattern Collapse for Structures in Future Logic Devices
Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue Removal
Wet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process
Analysis of Oxidized Copper Surface and its Evolution
Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning
Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study
UV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic Solvent
One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues
Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography
Selective High-Throughput TiN Etching Methods
The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition
Development of Integrated Wet Cleans for 3D-SIC Technologies
Post Chemical Mechanical Polish Cleaning Chemistry for through Silicon via Process
Chapter 5: Particles and Megasonic Cleaning
Acoustic Bubbles: Control and Interaction with Particles Adhered to a Solid Substrate
Single Bubble Cleaning and Vortex Flow
Acoustic Cavitation Behavior in Isopropyl Alcohol Added Cleaning Solution
Towards an Improved Megasonic Cleaning Process: Influence of Surface Tension on Bubble Activity in Acoustic Fields
Influence of Dissolved CO2 on Bubble Activity in Pulsed Acoustic Fields
Evaluation of Very Dilute Alkaline Solutions for Wafer Cleaning with Megasonic Irradiation
Removal of Fine Particle Using SAPS Technology and Functional Water
Non Destructive Nanoparticle Removal from Submicron Structures Using Megasonic Cleaning
Physical Cleaning Enhancement Using Advanced Spray with Uniform Droplet Control
CO2-Dissolved Water Cleans for 2xnm-Node Silicon Devices in a Single Wafer Megasonic System
Direct vs. Indirect Megasonic Tank Cleaning Systems; Uniformity, Cleaning Efficiency and Cost of Ownership
Development of a Near-Field Megasonic Cleaning System for Nano-Particle Removal
Megasonic Cleaning to Remove Nano-Dimensional Contaminants from Wafer Surfaces: An Analytical Study
Frictional Analysis of PVA Brush for Post CMP Cleaning: Effects of Rotation Speed, Compression Distance, and Fluid Viscosity
A New Retention Method for Sub-10 nm Liquid Filtration Using Fluorescent CdSe QDs
Chapter 6: Wetting and Drying
Investigation of the Evaporation and Wetting Mechanism of IPA-DIW Mixtures
Effect of the Surface/Water Chemistry on the Creation of Watermarks
Influence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning System
Wetting Challenges in Cleaning of High Aspect Ratio Nano-Structures
Evaluation of High-Speed Linear Air-Knife Based Wafer Dryer
Improved Drying Technology of Single Wafer Tool by Using Hot IPA/DIW
Effects of Substrate Temperature on the Leaning of Micropatterns during Rinse-Dry Process
Advanced Vacuum Wafer Drying for Thermal Laser Separation Dicing Assessment Results from European Collaborative “SEAL” Project
Chapter 7: Metal Contamination
Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation
Evaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning Process
Real-Time Analyses of Metal Contaminations in the ppb-Range
X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials
Characterization of Surface Metal Contaminations on Fused Quartz
Chapter 8: Cleaning and Wet Etching for Silicon Photo-Voltaic Applications
Cleaning in Crystalline Si Solar Cell Manufacturing
How to Overcome the Effects of Silicon Build-Up during Solar Cell Wet Chemical Processing
'Just Clean Enough': Wet Cleaning for Solar Cell Manufacturing Applications
Optimized Wet Processes and PECVD for High-Efficiency Solar Cells
Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements
Combined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar Cells
Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells
Surface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-Termination
Aspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar Cells
Improved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells


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