Ultra Clean Processing of Semiconductor Surfaces XI

Erscheinungsjahr 2013
ISBN: 978-3-03795-333-4
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volume 195, 350 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Solid State Phenomena

This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also treat the surface chemistry of silicon and other semiconductors, cleaning related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning following CMP (chemical mechanical polishing).

Autoren/Hrsg.

Mertens, Paul

Meuris, Marc

Heyns, Marc

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Fertigungstechnik

Inhaltsverzeichnis

Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage TransistorsCleaning Technology for Advanced Devices beyond 20 nm NodeDummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion IssueImplanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-MetalsDevelopment of a Integrated Dry/Wet Hybrid Cleaning SystemNew Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning MethodSelective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal ProcessWet Etching Behavior of Poly-Si in TMAH SolutionNovel Wet Etching of Silicon Nitride in a Single Wafer Spin ProcessorSelective Nitride Etch by Using Fluorides in High Boiling Point SolventSiO2 Etch Rate Modification by Ion ImplantationSurface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet EtchChemical Control of Surfaces: From Fundamental Understanding to Practical ApplicationSurface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial ResistanceA Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image SensorClean Process Mechanism of HKMG during N-PMOS PatterningStudy of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers)Evaluation of CD Fluctuation on QC Monitor
In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence GeometryCleaning of III-V Materials: Surface Chemistry ConsiderationsUnique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm FeaturesThe Risk of Pattern Collapse for Structures in Future Logic DevicesDetermination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 ProcessAnalysis of Oxidized Copper Surface and its EvolutionIntroduction of a Dynamic Corrosion Inhibitor for Copper Interconnect CleaningRemoving W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture ? A Case StudyUV-Induced Modification of Fluorocarbon Polymer: Effect of Treatment Atmosphere and Aging on Dissolution in Organic SolventOne-Step Wet Clean Removal of Post-Etch Fluoropolymer ResiduesDetermination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion ChromatographySelective High-Throughput TiN Etching MethodsThe Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers DepositionDevelopment of Integrated Wet Cleans for 3D-SIC TechnologiesPost Chemical Mechanical Polish Cleaning Chemistry for through Silicon via ProcessAcoustic Bubbles: Control and Interaction with Particles Adhered to a Solid SubstrateSingle Bubble Cleaning and Vortex FlowAcoustic Cavitation Behavior in Isopropyl Alcohol Added Cleaning SolutionTowards an Improved Megasonic Cleaning Process: Influence of Surface Tension on Bubble Activity in Acoustic FieldsInfluence of Dissolved CO2 on Bubble Activity in Pulsed Acoustic FieldsEvaluation of Very Dilute Alkaline Solutions for Wafer Cleaning with Megasonic IrradiationRemoval of Fine Particle Using SAPS Technology and Functional WaterNon Destructive Nanoparticle Removal from Submicron Structures Using Megasonic CleaningPhysical Cleaning Enhancement Using Advanced Spray with Uniform Droplet ControlCO2-Dissolved Water Cleans for 2xnm-Node Silicon Devices in a Single Wafer Megasonic SystemDirect vs. Indirect Megasonic Tank Cleaning Systems; Uniformity, Cleaning Efficiency and Cost of OwnershipDevelopment of a Near-Field Megasonic Cleaning System for Nano-Particle RemovalMegasonic Cleaning to Remove Nano-Dimensional Contaminants from Wafer Surfaces: An Analytical StudyFrictional Analysis of PVA Brush for Post CMP Cleaning: Effects of Rotation Speed, Compression Distance, and Fluid ViscosityA New Retention Method for Sub-10 nm Liquid Filtration Using Fluorescent CdSe QDsInvestigation of the Evaporation and Wetting Mechanism of IPA-DIW MixturesEffect of the Surface/Water Chemistry on the Creation of WatermarksInfluence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning SystemWetting Challenges in Cleaning of High Aspect Ratio Nano-StructuresEvaluation of High-Speed Linear Air-Knife Based Wafer DryerImproved Drying Technology of Single Wafer Tool by Using Hot IPA/DIWEffects of Substrate Temperature on the Leaning of Micropatterns during Rinse-Dry ProcessAdvanced Vacuum Wafer Drying for Thermal Laser Separation Dicing Assessment Results from European Collaborative ?SEAL? ProjectDiffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion ImplantationEvaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning ProcessReal-Time Analyses of Metal Contaminations in the ppb-RangeX-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor MaterialsCharacterization of Surface Metal Contaminations on Fused QuartzCleaning in Crystalline Si Solar Cell ManufacturingHow to Overcome the Effects of Silicon Build-Up during Solar Cell Wet Chemical Processing'Just Clean Enough': Wet Cleaning for Solar Cell Manufacturing ApplicationsOptimized Wet Processes and PECVD for High-Efficiency Solar CellsWet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage MeasurementsCombined Ozone/HF/HCI Based Cleaning and Adjusted Emitter Etch-Back for Silicon Solar CellsWet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar CellsSurface Charge and Interface State Density on Silicon Substrates after Ozone Based Wet-Chemical Oxidation and Hydrogen-TerminationAspects of Surface Conditioning for High-Efficient Hetero-Junction Silicon Solar CellsImproved Surface Cleaning by In Situ Hydrogen Plasma for Amorphous/Crystalline Silicon Heterojunction Solar Cells