Mertens / Meuris / Heyns | Ultra Clean Processing of Semiconductor Surfaces XII | Sonstiges | 978-3-03795-938-1 | sack.de

Sonstiges, Englisch, Band Volume 219, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Solid State Phenomena

Mertens / Meuris / Heyns

Ultra Clean Processing of Semiconductor Surfaces XII

Sonstiges, Englisch, Band Volume 219, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Solid State Phenomena

ISBN: 978-3-03795-938-1
Verlag: Trans Tech Publications


Collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium.
The 71 papers are grouped as follows:
Chapter 1: Cleaning for FEOL Applications,
Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area,
Chapter 3: Wet Etching for FEOL Applications,
Chapter 4: Wet Processing of High Aspect Ratio Structures,
Chapter 5: Fluid Dynamics, Cleaning Mechanics,
Chapter 6: Photo Resist Performance and Rework,
Chapter 7: Cleaning for BEOL Interconnect Applications,
Chapter 8: Cleaning for 3D Applications,
Chapter 9: Contamination Control and AMC,
Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells
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Weitere Infos & Material


Necessity of Cleaning and its Application in Future Memory DevicesRemoval of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning TechniqueCatalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe SurfacesHF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial GrowthRetardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet EtchingAluminum Reduction in SC1Metal Removal Efficiency in Deep Submicron Trenches by Wet ChemicalsImpact of Surface Treatment of Si3N4 on Subsequent SiO2 DepositionOperation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes InGaAs (110) Surface Cleaning Using Atomic HydrogenSurface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric AcidNanoscale Etching and Reoxidation of InAsPassivation of InSb(100) with 1-Eicosanethiol Self-Assembled MonolayersCross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing EnvironmentSurface Cleaning of Graphene by CO2 ClusterProcess Control Challenges of Wet Etching Large MEMS Si CavitiesWet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas ConditionsAdvanced Monitoring of TMAH SolutionEffect of Dissolved Oxygen for Advanced Wet ProcessingWatermark Formation on Bare Silicon: Impact of Illumination and Substrate DopingSelective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet ProcessorSingle Wafer Selective Silicon Nitride Removal with Phosphoric Acid and SteamPt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid SolutionNickel Selective Etch for Contacts on Ge Based DevicesStudy of Wetting of Nanostructures Using Decoration by EtchingImpact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale RegionFreeze Drying of High Aspect Ratio StructuresEffect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet EtchEffect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning ProcessEffects of Chamber Pressure on the Performance of CO2 Beam CleaningPhysical Chemistry of Water Droplets in Wafer Cleaning with Low Water UseMetal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer RotationNovel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMPEffect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule ConfigurationUnderstanding the Formation of Circular Ring Defects in Post-CMP CleaningParticle Measurement with a Liquid-Borne Particle Counter: Analytical Figures of MeritFluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient MethodsCharacterization of Cavitation in Ultrasonic or Megasonic Irradiated Gas Saturated Solutions Using a HydrophoneDetection of HO2?/O2?- Radicals Formed in Aqueous Solutions Irradiated with Megasonic Waves Using a Cavitation Threshold (CT) Cell Set-UpPhoto Lithography - Surface Preparation InteractionsStudy of Etchants? Diffusion into a 248 nm Deep UV Photoresist during a Wet EtchMegasonic Enhanced Photoresist Strip with DiO3Wetting Behavior of Plasma Etch Residue Removal Solutions on Plasma Damaged and Repaired Porous ULK DielectricsEffect of Downstream Plasma Treatment on Dissolution of Fluorocarbon Polymer in Organic SolventsPost Etch Residue Removal and Material Compatibility in BEOL Using Formulated ChemistriesCharacterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu CleaningTiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL PatterningIndustrial Challenges of TiN Hard Mask Wet Removal Process for 14nm Technology NodeTiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect ApplicationPrevention of Unexpected Oxidation of Metal Layer by Removing Hydrogen Peroxide from Ultrapure Water and Diluted Hydrofluoric AcidCost-of-Ownership Comparison of Single-Wafer Processes for Stripping Copper Pillar Bump PhotomasksThe Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI ApplicationsScaling the 3D Bumps Pitch from 20 to 10 ?m, Focusing on the Wet Cu Seed Etch Process DevelopmentAdhesion Improvement through Plasma Surface Treatments on Palladium SurfaceControl of HF Volatile Contamination in FOUP Environment by Advanced Polymers and Clean Gas PurgeFOUP Material Influence on HF Contamination during Queue-TimeEffect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device FabricationCorrelation of Cleaning Conditions and Wafer Out-GassingQuantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and AnnealingCollection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS AnalysisBackside and Bevel Contamination RemovalFocus Spot Reduction by Brush Scrubber CleaningUpside-Down Residual Sessile Droplet: Watermarks on Wafers BacksideNuclear Magnetic Resonance Spectroscopy of Trace Organic Impurities Extracted from a Corrosion Inhibitor and a Semiaqueous Residue RemoverImprovement of Silicon Solar Cell Substrates by Wet-Chemical Oxidation Studied by Surface Photovoltage MeasurementsSimplified Cleaning for a-Si:H Passivation of Wafers Bonded to GlassInvestigation of Silicon Saw Damage Removal and Surface Texturing Using KOH for next Generation Silicon Solar CellsImpact of Fe and Cu Surface Contamination on High Efficiency Solar Cell ProcessesOzone Base Cleaning: Impact on High Efficiency Interdigitated Back Contact Solar CellsRapid Determination of Organic Contaminations on Wafer SurfacesSurface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment


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