Sonstiges, Englisch, Band Volume 282, 356 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018)
Sonstiges, Englisch, Band Volume 282, 356 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Reihe: Solid State Phenomena
ISBN: 978-3-0357-2417-2
Verlag: Trans Tech Publications
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Weitere Infos & Material
Industry Context for Semiconductor Wet Etch and Surface PreparationSurface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In CarrierographyOrganic Material Removal by Thermally Activated Ozone GasCarbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum ChamberVapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale BiofunctionalizationToward the Surface Preparation of InGaAs for the Future CMOS IntegrationEffect of WET treatment on Group III-V Compound Semiconductor SurfaceNanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface ChemistryIon Implanted Photoresist Removal by Material Loss-Free Organic SolventRemoval of CrN Contamination from EUV Mask Backside Using Dry CleaningDamage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic TechnologyAn Observation Method of Real Contact Area during PVA Brush ScrubbingElectrostatic Discharge Control and Visualization in Spray NozzleBehavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer ProcessStudy of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline SolutionsUnexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and MorphologySelective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETsSiGe vs. Si Selective Wet Etching for Si Gate-all-AroundA New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-StacksCustomized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch ResiduesLow Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner SpacerRMG Patterning by Digital Wet Etching of Polycrystalline Metal FilmsWet Etchants Penetration through Photoresist during Wet PatterningIs Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet ApproachDrying Stability and Critical Height of Repeating Line/Space StructuresFixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction ProcessExploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIREffect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in BiosensorsCleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying TechniquePattern Collapse-Free Drying with Sacrificial Gap Fill PolymersFactors Influencing Drying Induced Pattern Collapse300 mm Wafer Development for Pattern Collapse EvaluationsAlCu Pitting Prevention in Post Etch CleaningInvestigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray ToolAluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HFAtomic Layer Deposition of TiN below 600 K Using N2H4Process Parameter Control for BEOL TiN Hard Mask Etch-BackBEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm NodeOptimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line ProcessCorrosion of Co in BEOL interconnects in dilute HF solutionEffect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical CharacterizationOptimization of Post Etch Cobalt Compatible Clean by pH and OxidizerDeveloping Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm NodesPost-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nmWet-Chemical Etching of Ruthenium in Acidic Ce4+ SolutionVersatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm ApplicationsImpact of Controlled Ni Contamination on Silicon Solar Wafer MaterialWet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar CellsInfluence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF MeasurementAdvanced Data Analysis Strategies for Understanding Particle Contamination in Chemical Distribution SystemsDetermination of HCl Transport Coefficients in Real FOUP Polymers for HCl Cross-Contamination Assessment from FOUP to WaferYield Enhancement due to Addition of Bevel Cleans at Middle of Line(MOL) Zone
