Buch, Englisch, 356 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 150 g
14th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (14th UCPSS 2018)
Buch, Englisch, 356 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 150 g
ISBN: 978-3-0357-1417-3
Verlag: Trans Tech Publications
Autoren/Hrsg.
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Weitere Infos & Material
Preface
Chapter 1: Keynote Paper
Industry Context for Semiconductor Wet Etch and Surface Preparation
Chapter 2: Surface Cleaning and Surface Functionalization
Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
Organic Material Removal by Thermally Activated Ozone Gas
Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization
Chapter 3: Surface Preparation of III-V Semiconductors
Toward the Surface Preparation of InGaAs for the Future CMOS Integration
Effect of WET treatment on Group III-V Compound Semiconductor Surface
Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry
Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent
Chapter 4: Mechanical Particle Removal
Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning
Damage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology
An Observation Method of Real Contact Area during PVA Brush Scrubbing
Electrostatic Discharge Control and Visualization in Spray Nozzle
Chapter 5: Si and Ge Etching
Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process
Study of the Anisotropic Wet Etching of Nanoscale Structures in Alkaline Solutions
Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology
Chapter 6: Selective SixGey Etching for Nanowire Release
Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs
SiGe vs. Si Selective Wet Etching for Si Gate-all-Around
A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks
Chapter 7: Gate-all-Around Gate Stack Processing
Customized Chemical Compositions Adaptable for Cleaning Virtually all Post-Etch Residues
Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer
RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films
Chapter 8: Non-Semiconductor Film Etching
Wet Etchants Penetration through Photoresist during Wet Patterning
Is Highly Selective Si3N4/SiO2 Etching Feasible without Phosphoric Acid?
Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach
Chapter 9: Wetting Drying and Pattern Collapse
Drying Stability and Critical Height of Repeating Line/Space Structures
Fixed Charge Control of Silylated Surface for Stiction-Free Drying with Surface Energy Reduction Process
Exploring Wetting Dynamics on Superhydrophobic Nanopatterned Surfaces Using ATR-FTIR
Effect of 1-D Nano-Confinement on the Kinetics of a Click-Chemistry Surface Reaction Used in Biosensors
Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique
Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers
Factors Influencing Drying Induced Pattern Collapse
300 mm Wafer Development for Pattern Collapse Evaluations
Chapter 10: Interconnects
AlCu Pitting Prevention in Post Etch Cleaning
Investigation of Defectivity Coming from the Back Side of Wafers during AlCu Polymer Removal Processes Performed in a Batch Spray Tool
Aluminum Cleaning on Single Wafer Tool: A Case Study with Diluted HF
Atomic Layer Deposition of TiN below 600 K Using N2H4
Process Parameter Control for BEOL TiN Hard Mask Etch-Back
BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node
Optimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line Process
Corrosion of Co in BEOL interconnects in dilute HF solution
Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization
Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer
Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes
Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution
Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
Chapter 11: Wet Processing for Photovoltaic Devices
Impact of Controlled Ni Contamination on Silicon Solar Wafer Material
Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)2 Thin Film Solar Cells
Chapter 12: Contamination: Control and Metrology
Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement
Advanced Data Analysis Strategies for Understanding Particle Contamination in Chemical Distribution Systems
Determination of HCl Transport Coefficients in Real FOUP Polymers for HCl Cross-Contamination Assessment from FOUP to Wafer
Yield Enhancement due to Addition of Bevel Cleans at Middle of Line(MOL) Zone
