Sonstiges, Englisch, 210 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 210 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-771-1
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBEInfluence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and AlxGa1-xAs Layers Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs DiodeSb Delta-Type Doping in Si-MBE SuperlatticesMolecular Beam Heteroepitaxy on Silicon SubstratesMBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on SemiconductorsEvaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating SourceComparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale ConditionsPED Mechanism Studied by Moleculardynamic Computer SimulationGrowth of Aluminum and Copper on Silicon by Molecular Beam EpitaxyMBE System for ResearchOptical Simulation of the Effusion Molecular Beams in Epitaxy TechnologyThe Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon Prior to Growth Examinations of the Quality of GaAs SubstratesThe Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT ApplicationsIII-V Heterostructure Lasers with Short Period Superlattice Recombination RegionAlGaAs/GaAs Heterojunction Photodiodes Grown by MBEAn Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor ContactElectrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky ContactsThe Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal ComponentsMBE Grown Planar Doped Barrier Diodes for Microwave PurposesInterface Symmetry and HeteroepitaxyMBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe SuperlatticesRaman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSeLow Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBEComputer Simulation of Interdiffusion Processes on II-VI SuperlatticesMBE Growth and Properties of Si/GeSi Superlattices on Si (111)The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in SemiconductorsEu2+ and Sm2+ Ions as a Photoluminescent Probe in Epitaxial CaF2 Films on SemiconductorsLow-Temperature Anomalies of 2D Electrons n-AlxGa1-xAs/GaAs Transfer PhenomenaIn Situ REM Study of Silicon Surface during MBE ProcessesInvestigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity OscillationComposition of Oxides on (100) GaAs Produced by Oxygen Ion BombardmentCharacteristics and Application of Thin Epitaxial Dielectrics Formed by MBESEM Investigation of Defects on InPCharacterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by PhotoluminescenceUltrahigh Vacuum SystemGaAs and GaSb Treatment for MBE
