Sonstiges, Englisch, 876 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 876 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03785-080-0
Verlag: Trans Tech Publications
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th ? September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ?SiC and related materials and their applications?. This volume is divided into five chapters ranging from ?SiC growth? to ?Biosystems? and thus represents a comprehensive coverage of the field.
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Enlargement Growth of Large 4H-SiC Bulk Single CrystalReducing Stacking Faults in Highly Doped N-Type 4H-SiC CrystalOn Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC CrystalsExperimental Verification of a Novel System for the Growth of SiC Single CrystalsQuality Investigation of 3C-SiC Crystals Grown by CF-PVT TechniquePolytype Stability of 4H-SiC Seed Crystal on Solution GrowthDefect Evaluation of SiC Crystal Grown by Solution Method: The Study by Synchrotron X-Ray Topography and Etching MethodEffect of Low Frequency Magnetic Field on SiC Solution GrowthCrystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent MethodThe Effect of Process Parameters on 4H-SiC Single Crystal Grown by a PVT MethodEffect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT MethodEvolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut DirectionsChloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face SubstratesEffects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8? Off-Cut 4H-SiC EpilayersReduction of the Surface Density of Single Shockley Faults by TCS Growth ProcessOn the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on a-SiC SubstratesChloride Based CVD of 3C-SiC on (0001) a-SiC SubstratesAnalytical Model of Stress Relaxation in 3C SiC Layers on SiliconStructural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si SubstratesAtomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo MethodPolarity Control of CVD Grown 3C-SiC on Si(111)Epitaxial Growth on 4H-SiC on-Axis, 0.5?, 1.25?, 2?, 4?, 8? Off-Axis Substrates ? Defects Analysis and ReductionInvestigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) TransportGeometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis SubstratesEpitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]Investigation of 3C-SiC Lateral Growth on 4H-SiC MesasHigh Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiCGrowth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis WaferGeneration of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC EpitaxyAdvanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS ApplicationEvaluation of Curvature and Stress in 3C-SiC Grown on Differently Oriented Si SubstratesRaman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing StructuresA Comparative Study of the Morphologies of Etch Pits in Semi-Insulating Silicon Carbide Single CrystalsNondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVDElectrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical TechniquesCarrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC LayersStructural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based MeltsOptical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking TechniqueExamination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing CharacteristicsUniformity of Properties of 4H-SiC CVD Films under Exposure to RadiationReduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron IrradiationStrain Measurements on Nitrogen Implanted 4H-SiCOn the Quantification of Al Incorporated in SiC Material Using Particle Induced X-Ray Emission TechniqueElectrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and C?TLM MeasurementsEvaluation of Long Carrier Lifetimes in Very Thick 4H-SiC EpilayersCompensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiCOptically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiCThe Strong Field Transport in 4H- and 6H-SiC at Low TemperatureComplete Determination of the Local Stress Field in Epitaxial Thin Films Using Single MicrostructureComparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron SputteringRaman Study of Bulk Mobility in 3C-SiC HeteroepitaxyDefects in SiC: TheoryEnhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal OxidationUsing Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100?C to 1500?CInfluence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC LayersDonor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P DonorObservation of Bistable Defects in Electron Irradiated N-Type 4H-SiCElectrically Active Defects in Electron Irradiated P-Type 6H-SiCIron-Related Defect Centers in 4H-SiC Detected by Deep Level Transient SpectroscopyLarge-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density FunctionalIron-Related Defect Centers in 3C-SiCFormation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+aElectrical Activity of Structural Defects in 3C-SiCEfficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC WafersPropagation of Stacking Faults in 3C-SiCEtch Pits on 4H-SiC Surface Produced by ClF3 GasDislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 AdditiveDislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 EtchingNew Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH EtchingImpact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC EpilayersCorrelation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal AnnealingInvestigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC EpilayersEffect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial LayersUnderstanding the Inversion-Layer Properties of the 4H-SiC/SiO2 InterfaceThe Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 InterfaceMicroscopic Examination of SiO2/4H-SiC InterfacesReduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of PotassiumShallow Traps at P-Doped SiO2/4H-SiC(0001) InterfaceInvestigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) SubstratesNon-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface StatesStudy of the Interface Properties of TiO2/SiO2/SiC by PhotocapacitanceEvaluation of 4H-SiC Carbon Face Gate Oxide ReliabilityOn the ?Step Bunching? Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon CarbideOxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-RaysImproved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-VElectrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect TransistorSurface Treatments of 4H-SiC Evaluated by Contact Angle MeasurementEmission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) WaferEffect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO2/SiC Interface on F-N Current DegradationEnergy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge TransferImproving Doping Efficiency of P+ Implanted Ions in 4H-SiCSimulation of the Incomplete Ionization of the n-Type Dopant Phosphorus in 4H-SiC, Including Screening by Free CarriersEffects of Process Variations on Silicon Carbide Devices for Extreme EnvironmentsTwo-Dimensional Modeling of Aluminum-Ion Implantation into 4H-SiCDLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N JunctionsImpact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiCInfluence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ IonsImproved MOS Interface Properties of C-Face 4H-SiC by POCl3 AnnealingTheoretical Studies for Si and C Emission into SiC Layer during Oxidation3C-SiC MOS Based Devices: From Material Growth to Device CharacterizationFormation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High VacuumCharacterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer DepositionImproved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High TemperatureComparative Study on Metallization and Passivation Materials for High Temperature Sensor ApplicationsSchottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based MetallizationsGraded Etched Junction Termination for SiC ThyristorsImprovement of Schottky Contact Characteristics by Anodic Oxidation of 4H-SiCToward a Better Understanding of Ni-Based Ohmic Contacts on SiCRecovery of Ohmic Contacts Formed on C-Face 4H-SiC Following High Temperature Post-ProcessingInvestigation of Epitaxial SiC PiN Diodes with Variable Mesa HeightInfluence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface StateThinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary ElectrodeControl of Inclined Sidewall Angles of 4H-SiC Mesa and Trench StructuresTEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred EtchingAbrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred EtchingReduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS DevicesOxidation Process by RTP for 4H-SiC MOSFET Gate FabricationCarbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC?-SiC NWs Grown on Patterned and MEMS Silicon SubstratesGrowth of SiC Microwires through Si Microwires CarburizationTime-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide NanocrystalsInfluence of Oxygen on the Absorption of Silicon Carbide NanoparticlesFabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) JunctionsAn Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KAComponent Technologies for Ultra-High-Voltage 4H-SiC pin DiodeBipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse RegimeAdvances in Silicon Carbide Single Photon DetectorsEffect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray DetectorsProton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop RingSiC Zener Diode for Gate Protection of 4.5 kV SiCGTOptical and Electrical Simulation of 4H-SiC UV Photodetector by Finite Element MethodAvalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel ProtectionThermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh EnvironmentsLow Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space StationLow Switching Energy 1200V Normally-Off SiC VJFET Power Modules1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches600-V Symmetrical Bi-Directional Power Switching Using SiC Vertical-Channel JFETs with Reliable Edge TerminationStudy of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETsHigh-Temperature Reliability of SiC Power MOSFETsInstability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)Schottky Barrier 3C-SiC Nanowire Field Effect TransistorDesign and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETsNumerical Simulations of a 4H-SiC BMFET Power Transistor with Normally-Off CharacteristicsOptically Triggered Power Switch Based on 4H-SiC Vertical JFETOptimization of SiC MESFET for High Power and High Frequency Applications1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation4kV Silicon Carbide MOSFETsA Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices3C-SiC MOSFET with High Channel Mobility and CVD Gate OxideComparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate DriverFabrication of P-Channel MOSFETs on 4H-SiC C-FaceUse of Vacuum as a Gate Dielectric: The SiC VacFET980 V, 33A Normally-Off 4H-SiC Buried Gate Static Induction TransistorsExtraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis SubstratesSilicon Carbide Vertical JFET with Self-Aligned Nickel Silicide ContactsCharacterisation of HfO2/Si/SiC MOS CapacitorsComparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETsPulse Current Characterization of SiC GTO Thyristors1200 V SiC BJTs with Low VCESAT and High Temperature CapabilityOptical Triggering of 4H-SiC Thyristors with a 365 nm UV LEDReverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation DensityImproved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by NitridationCurrent Gain Degradation in 4H-SiC Power BJTsHigh Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination ExtensionHigh Voltage 4H-SiC BJTs with Deep Mesa Edge Termination600V-30A 4H-SiC JBS and Si IGBT Hybrid ModuleLifetime Control of 4.5 kV SiCGT by High-Energy Electron IrradiationPerformance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter ApplicationHigh Temperature Silicon Carbide CMOS Integrated Circuits300?C Silicon Carbide Integrated Circuits4H-SiC N-MOSFET Logic Circuits for High Temperature OperationForced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/LThermal Management versus Full Isolation: Trade Off in Packaging Technologies of Modern SiC DiodesAn All Silicon Carbide High Temperature (450+ ?C) High Voltage Gain AC Coupled Differential AmplifierFault Protection System for Current Source Inverter with Normally on SiC JFETsStudy on the Feasibility of SiC Bandgap Voltage Reference for High Temperature ApplicationsMeasurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated CircuitsA Molded Package Optimized for High Voltage SiC-DevicesLocal Electrical Properties of the 4H-SiC(0001)/Graphene InterfaceThe Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor EtchingNanobaguettes Single Epitaxial Graphene Layers on SiC(11-20)High Temperature Graphene Formation on Capped and Uncapped SiCObservations on C-Face SiC Graphene Growth in ArgonInfluence of Intercalated Silicon on the Transport Properties of GrapheneTemperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si SubstrateElectrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion ImplantationElectrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8?-Off-Axis 4H-SiC EpilayersAl-Si-Ti Ohmic Contacts on N-Type Gallium NitrideOhmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices TCharacterization of Fast Switching Capability for Diamond Schottky Barrier DiodeSingle-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical ApplicationsCellular Interactions on Epitaxial Graphene on SiC (0001) Substrates
