Sonstiges, Englisch, 288 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 288 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-908453-12-3
Verlag: Trans Tech Publications
This special-topic volume? Advances in Light-Emitting Materials?, makes an important contribution to the field of silicon and III-nitride semiconductors. It begins with a brief history of visible-light emitting diodes. However, silicon is currently expanding from micro-electronics and into photonics. Due to its unsuitable band-gap, it has not previously been the material-of-choice for opto-electronic integration. That is now beginning to change and silicon devices have been developed which have the capability to emit, modulate, guide and detect light and which can be combined with microelectronics to form electronic and photonic integrated circuits.
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Weitere Infos & Material
Visible Light-Emitting Diodes - The Formative YearsPerspective on the Development of III-Nitrides for Optical EmittersDislocations in Silicon and D-Band Luminescence for Infrared Light EmittersDislocation Networks Formed by Silicon Wafer Direct BondingSi- and SiGe-Based LEDsSOI-LEDs with Carrier ConfinementMOS Light Emitting Devices Based on Rare-Earth Ion Implantation Present Status of Deep UV Nitride Light EmittersAlN and AlGaN by MOVPE for UV Light Emitting DevicesNonpolar and Semipolar Orientations: Material Growth and PropertiesImpact of Point Defects on the Luminescence Properties of (Al,Ga)NAssessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells
