Nazarov / Lysenko / Flandre | Functional Nanomaterials and Devices VII | Sonstiges | 978-3-03795-637-3 | sack.de

Sonstiges, Englisch, Band Volume 854, 180 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Advanced Materials Research

Nazarov / Lysenko / Flandre

Functional Nanomaterials and Devices VII


Erscheinungsjahr 2014
ISBN: 978-3-03795-637-3
Verlag: Trans Tech Publications

Sonstiges, Englisch, Band Volume 854, 180 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Advanced Materials Research

ISBN: 978-3-03795-637-3
Verlag: Trans Tech Publications


Volume is indexed by Thomson Reuters CPCI-S (WoS).
The volume contains some of the most recent knowledge on Functional Nanomaterials and Devices.
The papers are grouped into:
1. semiconductor-on-insulator structures, devices and sensors;
2. physics of new functional nanodevices and sensors;
3. diagnostics methods of nanomaterials and devices;
4. functional nanomaterials in medicine.

The first part considers transport phenomena in thin silicon layer near back SiO2-Si interface of the SOI structures fabricated with DELICATE technology, mobility increase in high doped nanowire junctionless multigate MOSFETs; photoconductance and LF noises in the Ge nanodots on SiO2 structures; operation of the SOI sensors in ordinary and 3D fabrication. The second part includes the papers regarding to new functional nanomaterials and devices being used as solar cells, photovoltaic devices, cold emitters for lighting and others. The third part considers different methods of electrical, magnetic, positron annihilation diagnostic of nanostructured materials and nanoscaled devices, and the fourth part is related to employing of nanostructures and nanocluster materials in medicine.
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Weitere Infos & Material


An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 InterfaceTransport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001)Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiOx/Ge StructuresAcoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon FilmsOn the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETsHigh Sensitive Active MOS Photo Detector on the Local 3D SOI-StructureProperties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature SensorsCarbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron EmissionCharacteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic ApplicationsHybrid Solar Cells Based on CdS Nanowire ArraysFormation of Ordered Si Nanowires Arrays on Si SubstrateReliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic GatesMagnetic Resonance and Optical Study of Carbonized Silica Obtained by Pyrolysis of Surface CompoundsElectrical Properties of Composite Films with Silicon Nanocrystals in the Insulating MatrixPositron Annihilation Lifetime Spectroscopy Measurement of Ge5As37S58 GlassComparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron SputteringCharge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced PermittivityLow Dislocation Density and High Mobility GaN Layers for DHFET Channels Grown on High-Temperature AlN/AlGaN Buffer Layer by Ammonia MBEPeculiarities of the Impurity Redistribution under Ultra-Shallow Junction Formation in SiliconNanoparticles in Antivirus TherapyApplication of Oxidized Silicon Nanowires for Nerve Fibers Regeneration


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