Nazarov / Lysenko / Flandre | Journal of Nano Research Vol. 39 | Sonstiges | 978-3-03859-315-7 | sack.de

Sonstiges, Englisch, Band Volume 39, 286 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Journal of Nano Research

Nazarov / Lysenko / Flandre

Journal of Nano Research Vol. 39

Functional Nanomaterials and Devices
Erscheinungsjahr 2016
ISBN: 978-3-03859-315-7
Verlag: Trans Tech Publications

Functional Nanomaterials and Devices

Sonstiges, Englisch, Band Volume 39, 286 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Reihe: Journal of Nano Research

ISBN: 978-3-03859-315-7
Verlag: Trans Tech Publications


This special volume is devoted to the new and fast evolving field of physics and technology of functional nanomaterials and devices. The published review and original research papers contain new experimental and theoretical results in the field of fabrication and utilization of functional nanomaterials and devices for modern micro- and nanoelectronics with special emphasis on technology, physics and diagnostics. The problems of application of new materials, structures and devices for low power consumption and energy harvesting as well as for nanosensors (of pressure, temperature, biological species), optoelectronic devices and micro/nano-mechanical systems are addressed and discussed.
Nazarov / Lysenko / Flandre Journal of Nano Research Vol. 39 jetzt bestellen!

Weitere Infos & Material


Steep-Slope Devices: Prospects and ChallengesElectrical Characterization and Parameter Extraction of Junctionless Nanowire TransistorsEnhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial StressMagnetic Properties of Doped Si Whiskers for SpintronicsChemical Vapor Deposited Graphene for Opto-Electronic ApplicationsPhotoelectric Phenomena and Photoelectric Characterization Methods of the MOS System - Basics and New DevelopmentsThe Effect of Incorporation of Hydrocarbon Groups on Visible Photoluminescence of Thermally Treated Fumed SilicaMicro- and Nanotextured Silicon for Antireflective Coatings of Solar CellsOptical and Electron-Beam Recording of Surface Relief?s Using Ge5As37S58?Se Nanomultilayers as Registering MediaPhysical Insights on Charge Transport Mechanism and the LF Noise Behavior in Oxidized Si Structures with Ge NanoclustersMemristor Effect in Sandwich-Type Ni-TiOx-p/Si-Ni HeterojunctionHigh-k MNOS-Like Stacked Dielectrics for Non-Volatile Memory ApplicationSilicon Nanocrystalline Nonvolatile Memory - Characterization and AnalysisFePt Thin Films ? Prospective Materials for Ultrahigh Density Magnetic RecordingCapacitive Properties of MIS Structures with SiOx and SixOyNz Films Containing Si NanoclustersElectron Transport through Thin SiO2 Films Containing Si NanoclustersHopping Conduction in Structures with Ge Nanoclusters Grown on Oxidized Si (001)Development and Modeling of Thermal Energy Harvesting SetupSelected Questions Related to Characterization of MEMS Structures Comprising PZT Piezo LayerMorphology of the Interface ?Silicon Wire - Nerve Fiber"Multichannel Fiber-Optic Ring Converters for Optical Sensors of Physical QuantitiesThe Device-Technological Simulation of Local 3D SOI-StructuresNanostructured Metal Films Formed onto Porous Silicon TemplatePrecise Manipulations with Asymmetric Nano-Objects Viscoelastically Bound to a Surface


Eds. Prof. Alexei N. Nazarov, Prof. Volodymyr S. Lysenko, Prof. Denis Flandre, Dr. Yuri V. Gomeniuk


Ihre Fragen, Wünsche oder Anmerkungen
Vorname*
Nachname*
Ihre E-Mail-Adresse*
Kundennr.
Ihre Nachricht*
Lediglich mit * gekennzeichnete Felder sind Pflichtfelder.
Wenn Sie die im Kontaktformular eingegebenen Daten durch Klick auf den nachfolgenden Button übersenden, erklären Sie sich damit einverstanden, dass wir Ihr Angaben für die Beantwortung Ihrer Anfrage verwenden. Selbstverständlich werden Ihre Daten vertraulich behandelt und nicht an Dritte weitergegeben. Sie können der Verwendung Ihrer Daten jederzeit widersprechen. Das Datenhandling bei Sack Fachmedien erklären wir Ihnen in unserer Datenschutzerklärung.