Sonstiges, Englisch, 1080 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1080 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-976-0
Verlag: Trans Tech Publications
Autoren/Hrsg.
Weitere Infos & Material
Selected Properties of Hydrogenated Amorphous Silicon and Silicon-Carbon AlloysOn the Atomic Structure of Amorphous SemiconductorsPhysics of Device Grade Amorphous SiliconVery High Frequency Glow Discharge: Plasma- and Deposition AspectsHydrogen-Plasma Treated CVD Amorphous Silicon: Growth and PropertiesGrowth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance PlasmaDiagnostics of High-Rate a-Si:H Deposition in a Variable Frequency PlasmaEllipsometric Studies of a-Si:H Film Growth, Density and MicrostructurePlasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:HLuminescence of Porous and Amorphous Hydrogenated Silicon: Analogies and DifferencesElectric Field Dependence of Photoluminescence in a-Si:HVisible Light Emission at Room Temperature from PECVD a-SiOx:HThe Lifetimes of High-Frequency Phonons in Amorphous Silicon: Evidence for Phonon LocalizationWide Band Gap Microcrystalline Silicon Thin FilmsReactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin FilmsHydrogenated Amorphous Silicon Multilayer Structures: Classical and Quantum Electron PhenomenaAmorphous Hydrogenated Silicon-Germanium AlloysHydrogenated Amorphous Silicon Based Alloy: a-Si1-xCx:HRecent Progress in Hydrogenated Amorphous Germanium and Its AlloysPhotoconductivity in Hydrogenated Amorphous SiliconPersistent Photoconductivity in Hydrogenated Amorphous SiliconIs Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?Numerical Modelling of Transient Transport Properties in Amorphous SemiconductorsRecent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime ProductsElectronic DC Transport in a-Si:HProperties of Hot Carriers in a-Si:H in Comparison to a-SeShort Range Order and Atomic Charge Distribution in Amorphous SiliconSteady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:HApplications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous SiliconDeterminaton of Localized-State Distributions from Transient Photoconductivity DataOne-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous SiliconThe Nature of the Band Gap in Amorphous Si:HThe Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:HMicroscopic Mechanisms of Light-Induced Metastable Defects in a-Si:HHydrogen Influence of Thermally Induced Metastability in Amorphous SiliconLight-Induced Effects in a-Si:H and a-Si1-xNx:HThe Role of the Light Exposure on the Defect Formation of a-Si:HSimulations of Defect Formation Processes in Hydrogenated Amorphous SiliconOptically Detected Magnetic Resonance in a-Si:HRecombination via Defect Complexes in Hydrogenated Amorphous SiliconThe Influence of Chemical Annealing on the Electronic Surface Properties of Amorphous SiliconSurface States on Hydrogenated Amorphous SiliconSolar Cells and Modules Made from a-Si:H - Physics and TechnologyEfficiency Optimization Techniques for Amorphous Silicon Solar CellsIndustrialization of Amorphous Silicon Solar Cells and Their Future ApplicationsThin Film Position Sensitive Detectors Based on a-Si:H DevicesChemically Sensitive Light Addressable Potentiometric Sensors Based on Hydrogenated Amorphous SiliconBias Controlled Amorphous Si/SiC:H PhotodetectorsEffects of Trapping in a-Si:H DiodesHydrogenated Amorphous Silicon Thin Film Transistors with a Single Layered SiO2 Gate InsulatorAmorphous Silicon Technology for the Hardware Implementation of Artificial Neural NetworksAmorphous Silicon Analogue Memory Devices for Artificial Neural Networks