Neber-Aeschbacher | Hydrogenated Amorphous Silicon | Sonstiges | 978-3-03859-976-0 | sack.de

Sonstiges, Englisch, 1080 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Neber-Aeschbacher

Hydrogenated Amorphous Silicon

Sonstiges, Englisch, 1080 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

ISBN: 978-3-03859-976-0
Verlag: Trans Tech Publications


Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.
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Selected Properties of Hydrogenated Amorphous Silicon and Silicon-Carbon AlloysOn the Atomic Structure of Amorphous SemiconductorsPhysics of Device Grade Amorphous SiliconVery High Frequency Glow Discharge: Plasma- and Deposition AspectsHydrogen-Plasma Treated CVD Amorphous Silicon: Growth and PropertiesGrowth of Hydrogenated Amorphous Silicon in Electron Cyclotron Resonance PlasmaDiagnostics of High-Rate a-Si:H Deposition in a Variable Frequency PlasmaEllipsometric Studies of a-Si:H Film Growth, Density and MicrostructurePlasma Kinetics, Surface Phenomena and Growth Mechanism in Hydrogenated Amorphous Silicon: Transition from Amorphous to Micro- and Nano-Crystalline Si:HLuminescence of Porous and Amorphous Hydrogenated Silicon: Analogies and DifferencesElectric Field Dependence of Photoluminescence in a-Si:HVisible Light Emission at Room Temperature from PECVD a-SiOx:HThe Lifetimes of High-Frequency Phonons in Amorphous Silicon: Evidence for Phonon LocalizationWide Band Gap Microcrystalline Silicon Thin FilmsReactive Ion Etching Characterization of a-Si:H and a-SiC:H Thin FilmsHydrogenated Amorphous Silicon Multilayer Structures: Classical and Quantum Electron PhenomenaAmorphous Hydrogenated Silicon-Germanium AlloysHydrogenated Amorphous Silicon Based Alloy: a-Si1-xCx:HRecent Progress in Hydrogenated Amorphous Germanium and Its AlloysPhotoconductivity in Hydrogenated Amorphous SiliconPersistent Photoconductivity in Hydrogenated Amorphous SiliconIs Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?Numerical Modelling of Transient Transport Properties in Amorphous SemiconductorsRecent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime ProductsElectronic DC Transport in a-Si:HProperties of Hot Carriers in a-Si:H in Comparison to a-SeShort Range Order and Atomic Charge Distribution in Amorphous SiliconSteady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:HApplications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous SiliconDeterminaton of Localized-State Distributions from Transient Photoconductivity DataOne-Electron Theory of Defect States in Amorphous and Hydrogenated Amorphous SiliconThe Nature of the Band Gap in Amorphous Si:HThe Role of Hydrogen and Si-H Bonds in the Metastability of a-Si:HMicroscopic Mechanisms of Light-Induced Metastable Defects in a-Si:HHydrogen Influence of Thermally Induced Metastability in Amorphous SiliconLight-Induced Effects in a-Si:H and a-Si1-xNx:HThe Role of the Light Exposure on the Defect Formation of a-Si:HSimulations of Defect Formation Processes in Hydrogenated Amorphous SiliconOptically Detected Magnetic Resonance in a-Si:HRecombination via Defect Complexes in Hydrogenated Amorphous SiliconThe Influence of Chemical Annealing on the Electronic Surface Properties of Amorphous SiliconSurface States on Hydrogenated Amorphous SiliconSolar Cells and Modules Made from a-Si:H - Physics and TechnologyEfficiency Optimization Techniques for Amorphous Silicon Solar CellsIndustrialization of Amorphous Silicon Solar Cells and Their Future ApplicationsThin Film Position Sensitive Detectors Based on a-Si:H DevicesChemically Sensitive Light Addressable Potentiometric Sensors Based on Hydrogenated Amorphous SiliconBias Controlled Amorphous Si/SiC:H PhotodetectorsEffects of Trapping in a-Si:H DiodesHydrogenated Amorphous Silicon Thin Film Transistors with a Single Layered SiO2 Gate InsulatorAmorphous Silicon Technology for the Hardware Implementation of Artificial Neural NetworksAmorphous Silicon Analogue Memory Devices for Artificial Neural Networks


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